Reliability of Ferroelectric HfxZr1−xO2 Thin Films Using 300°C Low Temperature Process with Plasma-Enhanced Atomic Layer Deposition

ONAYA, Takashi, Y. C. Jung, NABATAME, Toshihide, H. Hernandez-Arriaga, J. Mohan, H. S. Kim, A. Khosravi, N. Sawamoto, R. M. Wallace, NAGATA, Takahiro, J. Kim, 小椋厚志.

50th IEEE Semiconductor Interface Specialists Conference. 2019.

作成時刻: 2019-12-25 03:00:21 +0900更新時刻: 2019-12-25 03:00:21 +0900