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Reliability of Ferroelectric HfxZr1−xO2 Thin Films Using 300°C Low Temperature Process with Plasma-Enhanced Atomic Layer Deposition

著者ONAYA, Takashi, Y. C. Jung, NABATAME, Toshihide, H. Hernandez-Arriaga, J. Mohan, H. S. Kim, A. Khosravi, N. Sawamoto, R. M. Wallace, NAGATA, Takahiro, J. Kim, 小椋 厚志.
会議名50th IEEE Semiconductor Interface Specialists Conference