Reliability of Ferroelectric HfxZr1−xO2 Thin Films Using 300°C Low Temperature Process with Plasma-Enhanced Atomic Layer Deposition
| 著者 | ONAYA, Takashi, Y. C. Jung, NABATAME, Toshihide, H. Hernandez-Arriaga, J. Mohan, H. S. Kim, A. Khosravi, N. Sawamoto, R. M. Wallace, NAGATA, Takahiro, J. Kim, 小椋 厚志. |
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| 会議名 | 50th IEEE Semiconductor Interface Specialists Conference |
| 発表年 | 2019 |
| 言語 | English |