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電子・光機能材料研究センター 機能材料分野 超ワイドギャップ半導体グループ

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論文

2026
  1. Yūki Katamune, Satoshi Inoshita, Akira Izumi, Kenji Watanabe, Tokuyuki Teraji, Satoshi Koizumi. Cathodoluminescence of n-type diamond films grown by hot-filament chemical vapor deposition: Effects of hydrogen concentration. Diamond and Related Materials. 162 113264-113264-6. 2026. Open Access
  2. Muhammad Qamar, Ghulam Abbas, Meiyong Liao, Satoshi Koizumi, Takatoshi Yamada, Bohuslav Rezek. Computational analysis of visible frequency plasmonic properties of graphene on wide band gap heterostructures. Scientific Reports. 16 [1] 9138-1-9138-13. 2026. Open Access
  3. Fumio Kawamura, Naoomi Yamada. Effects of TiN/TiSi2 buffer layer on the crystallinity and ohmicity of GaN on n-type Si (111). Materials Letters. 403 139568-139568-3. 2026. Open Access
  4. Takayoshi Oshima. Wet etching of (−102) β-Ga 2 O 3 with tetramethylammonium hydroxide (TMAH). Science and Technology of Advanced Materials. 27 [1] 2666988-1-2666988-11. 2026. Open Access
  5. Takayoshi Oshima. Formation of near-vertical trenches and fins with flat {−201} sidewalls on (512) β-Ga 2 O 3 via TMAH wet etching. Science and Technology of Advanced Materials. 27 [1] 2726186-1-2726186-7. 2026. Open Access
  6. Takayoshi Oshima, Yuichi Oshima. HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga 2 O 3. Science and Technology of Advanced Materials. 27 [1] 2680969-1-2680969-11. 2026. Open Access
  7. Takayoshi Oshima. Step-and-terrace surface formation on (−112) β-Ga 2 O 3 via thermal annealing. Japanese Journal of Applied Physics. 65 [17] 178001-178001-4. 2026. Open Access
  8. Mohammad Monish, Koki Hino, Yosuke Sasama, Masato Urakami, Takehiro Ota, Kenji Sakamoto, Kenichiro Takakura, Yamaguchi Takahide. Transfer of Freestanding Fluoropolymer Films for Advanced Semiconductor Devices. ACS Applied Materials & Interfaces. 18 [35] 47786-47796. 2026. Open Access
  9. Takayoshi Oshima, Yuichi Oshima. (110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga 2 O 3 homoepitaxial layers on (011) substrates. Japanese Journal of Applied Physics. 65 [13] 138001-138001-4. 2026. Open Access
  10. Fumio Kawamura, Takeyoshi Onuma, Kazutaka Mitsuishi. An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon Wafers. Advanced Physics Research. 5 [7] e70143-1-e70143-9. 2026. Open Access
  11. Toshihide Nabatame, Yoshihiro Irokawa, Tomomi Sawada, Hiromi Miura, Manami Miyamoto, Takashi Onaya, Yasuo Koide, Kazuhito Tsukagoshi. Characteristics of β -Ga 2 O 3 /Al 2 O 3 /Pt Capacitors with a Ga 2 O 3 Surface Modified Using the Dummy-SiO 2 Process. ECS Journal of Solid State Science and Technology. 15 [6] 064005-064005-6. 2026. Open Access
  12. Koki Hino, Mohammad Monish, Yosuke Sasama, Kenji Sakamoto, Yamaguchi Takahide. Effective lateral isolation for hydrogen-terminated diamond field-effect transistors via nitrogen ion implantation. Applied Physics Letters. 128 [21] 213503-1-213503-7. 2026. Open Access
  13. Yoshihiro Irokawa, Mamoru Usami, Jun Uzuhashi, Tadakatsu Ohkubo, Toshihide Nabatame, Yasuo Koide. Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces. ECS Journal of Solid State Science and Technology. 15 [5] 055002-055002-9. 2026. Open Access
  14. Guo Chen, Wen Zhao, Zhaozong Zhang, Satoshi Koizumi, Meiyong Liao. Ultrathin, Low‐Dissipation Nanomechanical Resonators of Single‐Crystal Diamond. Small. 22 [29] e14942-1-e14942-11. 2026. Open Access
  15. Keiji Shibata, Fumio Kawamura, Masashi Miyakawa, Hitoshi Yusa, Naoomi Yamada. Thin films of rutile-type GeO 2 fabricated via solid-phase crystallization under high pressure. Japanese Journal of Applied Physics. 65 [8] 088005-088005-4. 2026. Open Access
  16. Jun Uzuhashi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Tadakatsu Ohkubo. Atomic-scale observation of native oxides on c - and m -faced GaN surfaces. AIP Advances. 16 [4] 045004-1-045004-5. 2026. Open Access
  17. Yuichi Oshima, Takayoshi Oshima, Shiyu Xiao, Kazuto Murakami, Katsuhiro Imai, Takahiro Tomita. Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template. Journal of Applied Physics. 139 [7] 075302-1-075302-8. 2026. Open Access
  18. Takayoshi Oshima. Mapping primary crystallographic planes in β -Ga 2 O 3 based on a pseudo-cubic oxygen sublattice. Japanese Journal of Applied Physics. 65 [3] 038003-038003-3. 2026. Open Access
  19. Takayoshi Oshima. Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles. AIP Advances. 16 [2] 025145-1-025145-8. 2026. Open Access
  20. Jona Grümbel, Rüdiger Goldhahn, Martin Feneberg, Yuichi Oshima, Hazem Abu-Farsakh, Abdallah Qteish. Dielectric function and electronic structure of nondegenerate rocksalt ScN: Spectroscopic ellipsometry and GW calculations. Physical Review Materials. 10 [2] 024607-1-024607-11. 2026. Open Access
2025
  1. Zhanpeng Sun, Yunfei Song, Zijun Qi, Xiang Sun, Meiyong Liao, Rui Li, Qijun Wang, Lijie Li, Gai Wu, Wei Shen, Sheng Liu. Heat transport exploration through the GaN/diamond interfaces using machine learning potential. International Journal of Heat and Mass Transfer. 241 126724-126724-8. 2025. Open Access
  2. Kongping Wu, Renxiang Cheng, Leng Zhang, Wenxiu Wang, Fangzhen Li, Meiyong Liao. Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface. Surfaces and Interfaces. 56 105666-105666-12. 2025. Open Access
  3. Jiajun Xu, Diwei Zou, Tengfei Lu, Meiyong Liao, Stoffel Dominique Janssens, David Vazquez Cortes, Lijie Li, Qiao Chen, Gai Wu, Wei Shen. Theoretical predictions of beryllium-vacancy color centers in diamond. Diamond and Related Materials. 158 112645-112645-7. 2025. Open Access
  4. Wen Zhao, Guo Chen, Zhaozong Zhang, Satoshi Koizumi, Meiyong Liao. Frequency stability improvement of single-crystal diamond cantilever utilizing higher-order-mode excitation. Diamond and Related Materials. 157 112592-112592-5. 2025. Open Access
  5. Longxing Su, Bin Zhang, Ruqi Yang, Huiru Sun, Wenzhe Dong, Teng Yun, Jie Yang, Sudong Wu, Jianguo Lu, Meiyong Liao. Ultrawide bandgap diamond for optoelectronic synapse. Materials Today Physics. 59 101919-101919-11. 2025. Open Access
  6. Masahiro Hara, Toshihide Nabatame, Yoshihiro Irokawa, Tomomi Sawada, Manami Miyamoto, Hiromi Miura, Tsunenobu Kimoto, Yasuo Koide. A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures. Materials Science in Semiconductor Processing. 196 109606-109606-7. 2025. Open Access
  7. Takayoshi Oshima, Yuichi Oshima. Fabrication of β-Ga 2 O 3 /air-gap structures on (001) β-Ga 2 O 3 using HCl gas etching. Science and Technology of Advanced Materials: Methods. 5 [1] 2554046-1-2554046-7. 2025. Open Access
  8. Kongping Wu, Meiyong Liao. Mapping phonon dynamics to thermal transport via deep-learning NEMD: AlN/diamond interface engineering for GaN heat dissipation. Functional Diamond. 5 [1] 2561987-1-2561987-8. 2025. Open Access
  9. Yuichi Oshima, Takashi Shinohe. Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy. Science and Technology of Advanced Materials. 26 [1] 2485869-1-2485869-8. 2025. Open Access
  10. Yuichi Oshima, Takayoshi Oshima. Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy. Science and Technology of Advanced Materials. 26 [1] 2585551-1-2585551-9. 2025. Open Access
  11. Keyun Gu, Zilong Zhang, Zhaozong Zhang, Jian Huang, Yasuo Koide, Satoshi Koizumi, Meiyong Liao. Optical properties of single-crystal diamond MEMS: mitigating substrate interference. Functional Diamond. 5 [1] 2570362-1-2570362-9. 2025. Open Access
  12. Yuichi Oshima, Takayoshi Oshima. HCl-gas etching behavior of (001) β-Ga 2 O 3 under oxygen supply. Science and Technology of Advanced Materials. 26 [1] 2546285-1-2546285-10. 2025. Open Access
  13. Zhaozong Zhang, Grace Wong, Zilong Zhang, Wen Zhao, Guo Chen, Satoshi Koizumi, Meiyong Liao. Ultraprecise anisotropy mapping of Young's modulus in single-crystal diamond via mechanical resonance. Applied Physics Letters. 127 [18] 181904-1-181904-6. 2025. Open Access
  14. Takayoshi Oshima. Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH). Applied Physics Express. 18 [11] 116501-116501-5. 2025. Open Access
  15. Yosuke Sasama, Takuya Iwasaki, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Yamaguchi Takahide. Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor. Applied Physics Letters. 127 [14] 143502-1-143502-6. 2025. Open Access
  16. Wen Zhao, Guo Chen, Tokuyuki Teraji, Yasuo Koide, Masaya Toda, Meiyong Liao. Ultra‐High Sensitivity, Wide‐Range Thermometry Based on High‐Quality Microscale Diamond Resonators. Advanced Materials. 37 [42] e02012-1-e02012-10. 2025. Open Access
  17. Lewis T. Penman, Zak M. Johnston, Paul R. Edwards, Yuichi Oshima, Clifford McAleese, Piero Mazzolini, Matteo Bosi, Luca Seravalli, Roberto Fornari, Robert W. Martin, Fabien C.‐P. Massabuau. Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3. physica status solidi (b). 262 [8] 2400615-1-2400615-8. 2025. Open Access
  18. Jun Uzuhashi, Yoshihiro Irokawa, Toshihide Nabatame, Tadakatsu Ohkubo, Yasuo Koide. Observation of Atomic-Scale Structural Changes in Al2O3/GaN Interfacial Layers Prepared with a Dummy-SiO2 Process. ECS Journal of Solid State Science and Technology. 14 [8] 085001-085001-4. 2025. Open Access
  19. Zilong Zhang, Keyun Gu, Zhijian Zhao, Zheng‐Yan Lei, Yi‐Hsiu Kao, Meiyong Liao, Takahito Ono, Masaya Toda. Ultrasensitive and Reliable Diamond MEMS Magnetic Force Sensor with 3D Imaging at Room Temperature. Advanced Materials Technologies. 10 [16] 2500470-1-2500470-10. 2025. Open Access
  20. Takayoshi Oshima. Step-and-terrace surface formation on (001) β-Ga2O3 by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer. Japanese Journal of Applied Physics. 64 [8] 088001-088001-5. 2025. Open Access
  21. Keyun Gu, Zilong Zhang, Jian Huang, Yasuo Koide, Satoshi Koizumi, Meiyong Liao. Surface desorption properties of hydrogen-terminated diamond detected by micromechanical resonator. Applied Physics Letters. 126 [22] 221901-1-221901-6. 2025. Open Access
  22. Yuichi Oshima, Takashi Shinohe. Epitaxial lateral overgrowth of c-plane α -Ga2O3 using a stripe mask with ultra-narrow windows. Applied Physics Letters. 126 [20] 202104-1-202104-5. 2025. Open Access
  23. Takayoshi Oshima, Yuichi Oshima. Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching. AIP Advances. 15 [5] 055207-1-055207-7. 2025. Open Access
  24. Keyun Gu, Kongping Wu, Zilong Zhang, Takeo Ohsawa, Jian Huang, Yasuo Koide, Masaya Toda, Meiyong Liao. Synergistic Effect of Surface States and Deep Defects for Ultrahigh Gain Deep‐Ultraviolet Photodetector with Low‐Voltage Operation. Advanced Functional Materials. 35 [14] 2420238-1-2420238-10. 2025. Open Access
  25. Wen Zhao, Guo Chen, Keyun Gu, Masaya Toda, Yasuo Koide, Meiyong Liao. High-order resonance enhancing the mass sensitivity of diamond cantilevers. APL Materials. 13 [4] 041124-1-041124-11. 2025. Open Access
  26. Keyun Gu, Zilong Zhang, Takeo Ohsawa, Masataka Imura, Jian Huang, Yasuo Koide, Meiyong Liao. Photo-response performance regulation of a type-Ib diamond-based photodetector by H2 annealing and ozone treatment. Journal of Materials Chemistry C. 13 [13] 6816-6822. 2025. Open Access
  27. Mugove Maruzane, Yuichi Oshima. Luminescence properties of dislocations in α-Ga2O3. Journal of Physics D: Applied Physics. 58 [3] 03LT02-03LT02-7. 2025. Open Access
  28. Takayoshi Oshima, Yuichi Oshima. Near-vertical plasma-free HCl gas etching on (011) β-Ga2O3. Japanese Journal of Applied Physics. 64 [1] 018003-018003-3. 2025. Open Access
2024
  1. Kongping Wu, Liwen Sang, Meiyong Liao. Enhancement of interfacial thermal conductance by introducing carbon vacancy at the Cu/diamond interface. Carbon. 223 119021. 2024. Open Access
  2. Taisuke Kageura, Yosuke Sasama, Keisuke Yamada, Yamaguchi Takahide. Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers. Carbon. 229 119404-119404-12. 2024. Open Access
  3. Fumio Kawamura, Hidenobu Murata. Decomposition behavior of GaN under solid and ambient N2 pressure. Materials Letters. 374 137185-137185-3. 2024. Open Access
  4. Keyun Gu, Zilong Zhang, Guo Chen, Jian Huang, Yasuo Koide, Satoshi Koizumi, Wen Zhao, Meiyong Liao. Oxygen-termination effect on the surface energy dissipation in diamond MEMS. Carbon. 225 119159-119159-8. 2024. Open Access
  5. Fumio Kawamura, Takehiko Nagai. Cu2O single crystal growth using CuCl flux and bandgap evaluation. Materials Letters. 365 136428. 2024. Open Access
  6. Takayoshi Oshima, Rie Togashi, Yuichi Oshima. Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure. Science and Technology of Advanced Materials. 25 [1] 2378683-1-2378683-8. 2024. Open Access
  7. Wen Zhao, Satoshi Koizumi, Meiyong Liao. P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond. IEEE Electron Device Letters. 45 [12] 2268-2271. 2024. Open Access
  8. Takafumi Odani, Kenji Iso, Yuichi Oshima, Hirotaka Ikeda, Tae Mochizuki, Satoru Izumisawa. Realization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase Epitaxy. physica status solidi (b). 261 [11] 2300584-1-2300584-5. 2024. Open Access
  9. Shengbin Li, Meiyong Liao. Wearable Magnetic Field Sensor with Low Detection Limit and Wide Operation Range for Electronic Skin Applications. Advanced Science. 11 [37] 2304525-1-2304525-11. 2024. Open Access
  10. Guo Chen, Satoshi Koizumi, Yasuo Koide, Meiyong Liao. Low-Energy Dissipation Diamond MEMS. Accounts of Materials Research. 5 [9] 1087-1096. 2024. Open Access
  11. Yosuke Sasama, Takuya Iwasaki, Mohammad Monish, Kenji Watanabe, Takashi Taniguchi, Yamaguchi Takahide. Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator. Applied Physics Letters. 125 [9] 092103-1-092103-7. 2024. Open Access
  12. Takayoshi Oshima, Masataka Imura, Yuichi Oshima. Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination. Applied Physics Express. 17 [8] 086501-086501-5. 2024. Open Access
  13. Yoshihiro Irokawa, Toshihide Nabatame, Tomomi Sawada, Manami Miyamoto, Hiromi Miura, Kazuhito Tsukagoshi, Yasuo Koide. Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process. ECS Journal of Solid State Science and Technology. 13 [8] 085003-085003-4. 2024. Open Access
  14. Jona Grümbel, Yuichi Oshima. Band gaps and phonons of quasi-bulk rocksalt ScN. Physical Review Materials. 8 [7] L071601-1-L071601-8. 2024. Open Access
  15. Zilong Zhang, Keyun Gu, Guo Chen, Liwen Sang, Tokuyuki Teraji, Yasuo Koide, Satoshi Koizumi, Masaya Toda, Meiyong Liao. Highly Reliable Diamond MEMS Dual Sensor for Magnetic Fields and Temperatures with Self‐Recognition Algorithms. Advanced Materials Technologies. 9 [13] 2400153-1-2400153-12. 2024. Open Access
  16. Shigefusa F. Chichibu, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. Journal of Applied Physics. 135 [18] 185701-1-185701-20. 2024. Open Access
  17. Meiyong Liao, Huanying Sun, Satoshi Koizumi. High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond. Advanced Science. 11 [13] 2306013. 2024. Open Access
  18. Yoshihiro Irokawa, Akihiko Ohi, Toshihide Nabatame, Yasuo Koide. Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen. ECS Journal of Solid State Science and Technology. 13 [4] 045002. 2024. Open Access
  19. Taisuke Kageura, Yosuke Sasama, Tokuyuki Teraji, Kenji Watanabe, Takashi Taniguchi, Keisuke Yamada, Yamaguchi Takahide. Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond. ACS Applied Materials & Interfaces. 16 [10] 13212-13218. 2024. Open Access
  20. Kaede Makiuchi, Fumio Kawamura. Thin-film synthesis of metastable rocksalt MgSnN2 without epitaxial stabilization. Materials Letters. 358 135830. 2024. Open Access
  21. Guo Chen, Zilong Zhang, Keyun Gu, Liwen Sang, Satoshi Koizumi, Masaya Toda, Yasuo Koide, Meiyong Liao. Higher-order resonance of single-crystal diamond cantilever sensors toward high f‧Q products. Applied Physics Express. 17 [2] 021001-021001-4. 2024. Open Access
  22. 大島 孝仁, 大島 祐一. Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches. Applied Physics Letters. 124 [4] 042110. 2024. Open Access
  23. Takehiro Shimaoka, Satoshi Koizumi. Temperature Dependence of Betavoltaic Cell Performance of Diamond pn Junction Diode. IEEE Electron Device Letters. 45 [1] 96-99. 2024. Open Access
  24. 高根 倫史, 大島 孝仁, 原田 尚之. Rutile-type Ge x Sn1−x O2 alloy layers lattice-matched to TiO2 substrates for device applications. Applied Physics Express. 17 [1] 011008. 2024. Open Access
2023
  1. Jiangwei Liu, Masayuki Okamura, Hisanori Mashiko, Masataka Imura, Meiyong Liao, Yasuo Koide. Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates. Nanomaterials. 13 [7] 1256. 2023. Open Access
  2. 川村 史朗, ソン イェリン, 村田 秀信, 井村 将隆. Fabrication of the bandgap-tuned alkaline earth-alloyed SnS solar cell. Journal of the Ceramic Society of Japan. 131 [10] 708-711. 2023.
  3. Zilong Zhang, Guo Chen, Keyun Gu, Satoshi Koizumi, Meiyong Liao. Effect of defects on Q factors of single-crystal diamond MEMS resonators. Functional Diamond. 3 [1] 2221280. 2023. Open Access
  4. Takayoshi Oshima, Shinji nakagomi. Epitaxial relationship of NiO on ( 1̅ 02) β-Ga2O3. Japanese Journal of Applied Physics. 62 [12] 128001. 2023. Open Access
  5. Zilong Zhang, Keyun Gu, Meiyong Liao. Regulation of Te oxide layer on a CdZnTe film for adjusting surface contact of a CdZnTe-based device. Materials Science in Semiconductor Processing. 168 107841. 2023. Open Access
  6. Takafumi Odani, Yuichi Oshima. Crystallization of high-resistivity Zn-doped GaN monocrystal via hydride vapor phase epitaxy. Journal of Crystal Growth. 622 127389. 2023.
  7. Huanying Sun, Zilong Zhang, Guo Chen, Meiyong Liao. Diamond MEMS: From Classical to Quantum. Advanced Quantum Technologies. 6 [11] 2300189. 2023. Open Access
  8. Tetsuichi Kishishita, Kimiyoshi Ichikawa, Satoshi Koizumi. A membrane, pseudo-vertical p-i-n diamond detector. Journal of Nuclear Science and Technology. 60 [10] 1285-1291. 2023. Open Access
  9. Yuichi Oshima, Takayoshi Oshima. Homoepitaxial growth of 1ˉ02  β-Ga2O3 by halide vapor phase epitaxy. Semiconductor Science and Technology. 38 [10] 105003. 2023. Open Access
  10. Guo Chen, Zilong Zhang, Yasuo Koide, Satoshi Koizumi, Zhaohui Huang, Meiyong Liao. Disclosing the annihilation effect of ion-implantation induced defects in single-crystal diamond by resonant MEMS. Diamond and Related Materials. 138 110240. 2023. Open Access
  11. Yuichi Oshima, Takayoshi Oshima. Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga2O3. Japanese Journal of Applied Physics. 62 [8] 080901. 2023. Open Access
  12. Zilong Zhang, Wen Zhao, Guo Chen, Satoshi Koizumi, Yasuo Koide, Meiyong Liao. On‐chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film. Advanced Functional Materials. 33 [27] 2300805. 2023. Open Access
  13. Zhuoqun Wen, Yuichi Oshima. Thermal stability of HVPE-grown (0001) α-Ga2O3 on sapphire template under vacuum and atmospheric environments. Journal of Vacuum Science & Technology A. 41 [4] 043403. 2023.
  14. Yuichi Oshima, Hiroyuki Ando. Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy. Applied Physics Express. 16 [6] 065501. 2023. Open Access
  15. Gufei Zhang, Meiyong Liao. Unconventional Giant “Magnetoresistance” in Bosonic Semiconducting Diamond Nanorings. Advanced Materials. 35 [22] 2211129. 2023. Open Access
  16. Takayoshi Oshima, Yuichi Oshima. Anisotropic non-plasma HCl gas etching of a (010) β-Ga2O3 substrate. Applied Physics Express. 16 [6] 066501. 2023. Open Access
  17. Yoshihiro Irokawa, Kazutaka Mitsuishi, Takatomi Izumi, Toshihide Nabatame, Yasuo Koide. Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs. ECS Journal of Solid State Science and Technology. 12 [5] 055007. 2023.
  18. Liwen Sang, Meiyong Liao, Masatomo Sumiya, Xuelin Yang. High‐pressure MOCVD growth of InGaN thick films toward the photovoltaic applications. Fundamental Research. 3 [3] 403-408. 2023. Open Access
  19. Keyun Gu, Zilong Zhang, Meiyong Liao. Tailoring photodetection performance of self-powered Ga2O3 UV solar-blind photodetectors through asymmetric electrodes. Journal of Materials Chemistry C. 11 [16] 5371-5377. 2023. Open Access
  20. Takayoshi Oshima, Yuichi Oshima. Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas. Applied Physics Letters. 122 [16] 162102. 2023. Open Access
  21. Fumio Kawamura, Yuki Shibazaki, Hitoshi Yusa, Takashi Taniguchi. High-Pressure Synthesis of Th3P4-Type c-Zr3N4 Using a Metathesis Reaction and In Situ X-ray Diffraction Studies of the Formation Process. Crystal Growth & Design. 23 [4] 2504-2510. 2023.
  22. Hitoshi Takane, Takayoshi Oshima. Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate. Applied Physics Express. 16 [4] 045503. 2023. Open Access
  23. Huiyun Xiao, Meiyong Liao. Dual Mode Strain–Temperature Sensor with High Stimuli Discriminability and Resolution for Smart Wearables. Advanced Functional Materials. 33 [16] 2214907. 2023. Open Access
  24. Yūki Katamune, Akira Izumi, Kimiyoshi Ichikawa, Satoshi Koizumi. Heavy phosphorus doping of diamond by hot-filament chemical vapor deposition. Diamond and Related Materials. 134 109789. 2023.
  25. Kaede Makiuchi, Fumio Kawamura, Yelim Song. Pressure-Induced Transition from Wurtzite and Epitaxial Stabilization for Thin Films of Rocksalt MgSnN2. Chemistry of Materials. 35 [5] 2095-2106. 2023.
  26. Xinyi Xia, Yuichi Oshima. Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3. Journal of Vacuum Science & Technology A. 41 [2] 023205. 2023.
  27. D. Nicol, Y. Oshima. Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3. Applied Physics Letters. 122 [6] 062102. 2023.
  28. Suna Jia, Meiyong Liao. Interfacial charge transfer and electronic structure of diamond/c-BN heterointerface. Computational Materials Science. 218 111947. 2023. Open Access
  29. Takayoshi Oshima. Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography. Japanese Journal of Applied Physics. 62 [1] 018004. 2023. Open Access

書籍

2024
  1. ジャン ジロン, LIAO, Meiyong. Single-Crystal Diamond MEMS Magnetic Sensor. Novel Aspects of Diamond II. 2024. Open Access

会議録

2024
  1. Guo Chen, Zilong Zhang, Keyun Gu, Liwen Sang, Satoshi Koizumi, Masaya Toda, Yasuo Koide, Zhaohui Huang, Meiyong Liao. High-order resonance of single-crystal diamond MEMS with high-quality factor at high temperatures. 2024 IEEE 19th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). 1-4. 2024. Open Access
  2. Keyun Gu, Zilong Zhang, Guo Chen, Liwen Sang, Jian Huang, Yasuo Koide, Meiyong Liao. Ultrahigh Responsivity of Diamond-based Solar-blind Photodetectors Using Hydrogen Plasma Treatment. 2024 IEEE 19th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). 1-4. 2024. Open Access
2023
  1. Toshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi. (Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias Stress. ECS Transactions. 112 [1] 109-117. 2023.

口頭発表

2026
  1. OSHIMA, Takayoshi. Pseudo-cubic representation of the monoclinic β-Ga2O3 structure and its applications for exploring substrate orientations. Transparent Conductive Oxides - Fundamentals and Applications (TCO 2026). 2026. 招待講演
  2. Kazuyoshi Norimatsu, OSHIMA, Takayoshi, Yuri Shimizu, Ai Kono, Shinpei Matsuda. Depletion-mode r-GeO2 MOSFETs Fabricated by Selective Area Growth via Atmospheric Pressure Chemical Vapor Deposition with Ultrasonic Transducers. 2026 International Conference on Solid State Devices and Materials (SSDM2026). 2026.
  3. J. Grümbel, D.V. Dinh, OSHIMA, Yuichi, A. Dubroka, R. Goldhahn, M. Feneberg. Anomalous absorption edge shift and high electron mobility in nondegenerate ScN at cryogenic temperatures. The 2026 Fall Meeting & Exhibit of the European Materials Research Society (E-MRS). 2026.
  4. 大島 祐一, 大島 孝仁, 肖 世玉, 村上 和仁, 今井 克宏, 冨田 崇弘. c面α-(Cr0.8Fe0.2)2O3テンプレート上のα-Ga2O3のハライド気相成長. 2026年第87回応用物理学会秋季学術講演会. 2026.
  5. 大島 祐一, 大島 孝仁, 林 家弘, 佐々木 公平. (001) β-Ga2O3のHVPEによる高濃度n型ドーピング. 第87回応用物理学会秋季学術講演会. 2026.
  6. 大島 孝仁, 大島 祐一. β型酸化ガリウム(011)面基板上ハライド気相成長膜の表面形状. 2026年 第87回応用物理学会秋季学術講演会. 2026.
  7. 大島 孝仁, 大島 祐一. β型酸化ガリウム半導体用Ti/Pt/Auオーミック電極. 2026年 第87回応用物理学会秋季学術講演会. 2026.
  8. 神野 莉衣奈, 肖 世玉, 大島 孝仁, 岩本 敏, 村上 和仁, 今井 克宏, 冨田 崇弘. ミストCVD法によるα-Cr2O3テンプレート上のα-(Al,Ga)2O3薄膜の成長. 2026年 第87回応用物理学会秋季学術講演会. 2026.
  9. 余野 正樹, 池之上 卓己, 大島 孝仁, 土井 俊哉. ミストCVD法によるβ-Ga2O3 (011) 基板上NiOエピタキシャル成長. 2026年 第87回応用物理学会秋季学術講演会. 2026.
  10. 池之上 卓己, 余野 正樹, 大島 孝仁, 三宅 正男, 土井 俊哉. 疑似立方晶格子によるβ-Ga2O3上NiO薄膜のエピタキシャル関係の理解. 2026年 第87回応用物理学会秋季学術講演会. 2026.
  11. 大島 孝仁, 大島 祐一. (−102), (512)面β 型酸化ガリウム基板のTMAHウェットエッチング特性. 2026年 第87回応用物理学会秋季学術講演会. 2026.
  12. 井村 将隆, 廣戸 孝信, 大島 孝仁, 間野 高明, ザオ ウェン, 廖 梅勇, 糸数 雄吏, 定 昌史, 森 建紀, Zhang Ya. 格子整合AlxIn1–xN犠牲層を用いたサファイア基板上GaN MEMS共振子の作製と高Q動作. 2026年 第87回応用物理学会秋季学術講演会. 2026.
  13. L. Penman, M. Maruzane, OSHIMA, Yuichi, P. R. Edwards, R. W. Martin, F.C-P. Massabuau. Electron microscopy investigation of laterally overgrown α-Ga2O3. 21st International Conference on Defects Recognition, Imaging and Physics in Semiconductors (DRIP21). 2026.
  14. OSHIMA, Takayoshi, OSHIMA, Yuichi. HCl-based halide vapor phase epitaxy and HCl gas etching on (-112) β-Ga2O3 substrates. The 6th International Workshop on Gallium Oxide and Related Materials (IWGO 2026). 2026.
  15. OSHIMA, Takayoshi. Anisotropic wet etching of β-Ga2O3 using TMAH. The 6th International Workshop on Gallium Oxide and Related Materials (IWGO 2026). 2026.
  16. Riena Jinno, Shiyu Xiao, OSHIMA, Takayoshi, Satoshi Iwamoto, Katsuhiro Imai, Takahiro Tomita. Coherent growth of α-(Al,Ga)2O3 on α-Cr2O3 templates by mist CVD. The 6th International Workshop on Gallium Oxide and Related Materials (IWGO 2026). 2026.
  17. OSHIMA, Yuichi, OSHIMA, Takayoshi, 肖 世玉, 村上 和仁, 今井 克宏, 冨田 崇弘. Structural and electrical properties of c-plane α-Ga2O3 grown on high-quality α-Cr2O3 templates by HVPE. The 6th International Workshop on Gallium Oxide and Related Materials (IWGO 2026). 2026.
  18. OSHIMA, Yuichi, OSHIMA, Takayoshi. Identification of facets formed on (011) β-Ga2O3 homoepitaxial layers. The 6th International Workshop on Gallium Oxide and Related Materials (IWGO 2026). 2026.
  19. CHEN, Guo, ZHAO, Wen, ZHANG, Zhaozong, KOIZUMI, Satoshi, LIAO, Meiyong. Ultrathin Diamond NEMS Cantilevers with Enhanced Frequency Stability for High-Sensitivity Mass Sensing. 19th International Conference on New Diamond and Nano Carbons (NDNC 2026). 2026.
  20. ZHAO, Wen, ZHANG, Zhaozong, CHEN, Guo, KOIZUMI, Satoshi, LIAO, Meiyong. Diamond MEMS Resonator for Ultra-High-Resolution Thermometry. 19th International Conference on New Diamond and Nano Carbons. 2026.
  21. LIAO, Meiyong. Diamond MEMS for Robust Micro/Nano Systems. 19th International Conference on New Diamond and Nano Carbons. 2026. 招待講演
  22. ZHANG, Zhaozong, ZHAO, Wen, CHEN, Guo, KOIZUMI, Satoshi, LIAO, Meiyong. Defect-Related Mechanical Dissipation Anisotropy in Diamond MEMS Resonators. 19th International Conference on New Diamond and Nano Carbons. 2026.
  23. CHEN, Guo, ZHAO, Wen, ZHANG, Zhaozong, KOIZUMI, Satoshi, LIAO, Meiyong. Ultrathin Single-Crystal Diamond NEMS Cantilevers for High-Sensitivity Nanomechanical Sensing. The European Materials Research Society (E-MRS) 2026 Spring Meeting & Exhibit. 2026.
  24. OSHIMA, Takayoshi. V-shaped grooves formed on (−102) β-Ga2O3 using TMAH wet etching. Compound Semiconductor Week 2026 (CSW2026). 2026.
  25. OSHIMA, Takayoshi. Pseudo-cubic representation of the monoclinic β-Ga2O3 structure. Compound Semiconductor Week 2026 (CSW2026). 2026.
  26. 大島 孝仁. (010)面β-Ga2O3上におけるTMAHを用いた結晶異方性ウェットエッチング. 2026年 第73回応用物理学会春季学術講演会. 2026.
  27. 松田 慎平, 清水 悠吏, 大島 孝仁, 河野 愛, 衣斐 豊祐. コンダクタンス法によるr-GeO2 SBD ショットキー界面特性の評価と解析. 2026年 第73回応用物理学会春季学術講演会. 2026.
  28. 大島 孝仁, 大島 祐一. (011)近傍面方位β-Ga2O3上のHCl系ハライド気相成長とHClガスエッチング. 2026年 第73回応用物理学会春季学術講演会. 2026.
  29. 大島 祐一, 大島 孝仁, 肖 世玉, 村上 和仁, 今井 克宏, 冨田 崇弘. c面α-Cr2O3テンプレート上のα-Ga2O3のハライド気相成長. 2026年 第73回応用物理学会春季学術講演会. 2026.
  30. 大島 孝仁. 酸素格子から考えたβ型酸化ガリウムの主要な結晶面方位. 2026年 第73回応用物理学会春季学術講演会. 2026.
  31. 大島 祐一, 大島 孝仁. HCl-HVPEによる(011) β-Ga2O3の高速ホモエピ成長. 2026年 第73回応用物理学会春季学術講演会. 2026.
  32. SASAMA, Yosuke, YAMAGUCHI, Takahide. Channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor. Hasselt Diamond Workshop 2026 - SBDD XXX. 2026. 招待講演
  33. YAMAGUCHI, Takahide, HINO, Koki, SASAMA, Yosuke, MOHAMMAD, Monish, KIKKAWA, Jun, アマリア ワルダ, MIYAZAKI, Tsuyoshi. Highly conductive interface between single-crystalline α-MoO3 and hydrogen-terminated diamond. Hasselt Diamond Workshop 2026 - SBDD XXX. 2026.
  34. OSHIMA, Takayoshi. Crystallographic anisotropic etching of β-Ga2O3. ISPlasma 2026 (18th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials). 2026. 招待講演
  35. L. Penman, M. Maruzane, OSHIMA, Yuichi, P. R. Edwards, R. W. Martin, F. C.-P. Massabuau. Electron microscopy investigation of laterally overgrown α-Ga2O3. The UK Nitrides Consortium (UKNC) Winter Meeting 2026. 2026.
2025
  1. NABATAME, Toshihide, IROKAWA, Yoshihiro, 澤田 朋実, 宮本 真奈美, 三浦 博美, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Effect of atmospheric gas in the dummy-SiO2 technique on the characteristics of beta-Ga2O3/Al2O3/Pt capacitors. 56th IEEE Semiconductor Interface Specialists Conference. 2025.
  2. 笹間 陽介. ダイヤモンド高移動度トランジスタ. イノベーションリーダーズサミット(ILS)2025. 2025.
  3. NABATAME, Toshihide, IROKAWA, Yoshihiro, 澤田 朋実, 三浦 博美, 宮本 真奈美, ONAYA, Takashi, TSUKAGOSHI, Kazuhito. Improvement of electrical properties of Ga2O3/Al2O3/Pt capacitors using the ALD-dummy-SiO2 process. 38th International Microprocesses and Nanotechnology Conference (MNC 2025). 2025.
  4. OSHIMA, Takayoshi. Novel crystallographic etching of β-Ga2O3. IMFEDK 2025 (The 2025 International Meeting for Future of Electron Devices, Kansai). 2025. 招待講演
  5. ザオ ウェン, 陳 果, 寺地 徳之, 張 兆宗, 小泉 聡, 廖 梅勇. ダイヤモンドMEMSを用いたナノケルビン温度計測. 第３９回ダイヤモンドシンポジウム. 2025.
  6. 張 兆宗, ザオ ウェン, 陳 果, 小泉 聡, 廖 梅勇. 単結晶ダイヤモンドにおけるヤング率の定量評価と異方性解析. 第３９回ダイヤモンドシンポジウム. 2025. Open Access
  7. 陳 果, ザオ ウェン, 張 兆宗, 小泉 聡, 廖 梅勇. MEMS熱センサー用グラフェン・オン・ダイヤモンド. 第３９回ダイヤモンドシンポジウム. 2025.
  8. NABATAME, Toshihide, 澤田 朋実, IROKAWA, Yoshihiro, 宮本 真奈美, 三浦 博美, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Influence of Ga2O3/Al2O3 interface on characteristics of Ga2O3 capacitors. 248th ECS Meeting. 2025. 招待講演
  9. 柴田 敬司, 川村 史朗, 宮川 仁, 遊佐 斉, 山田 直臣. 高圧を活用したルチル型GeO2薄膜のガラス基板上への作製. 第86回 応用物理学会秋季学術講演会. 2025.
  10. 大島 孝仁, 大島 祐一. (001)面β-Ga2O3 基板上のβ-Ga2O3/エアギャップ構造作製. 第86回応用物理学会 秋季学術講演会. 2025.
  11. 陳 果, ザオ ウェン, ZHANG, Zhaozong, KOIZUMI, Satoshi, LIAO, Meiyong. Developing nickel-catalyzed graphene/diamond heterostructures for MEMS applications. 第86回応用物理学会秋季学術講演会. 2025. Open Access
  12. ZHANG, Zhaozong, ザオ ウェン, 陳 果, KOIZUMI, Satoshi, LIAO, Meiyong. Characterization of Young’s Modulus Anisotropy of Single-Crystal Diamond. 第86回応用物理学会秋季学術講演会. 2025. Open Access
  13. N. Pholsen, J. Jeon, H. Otsuki, OSHIMA, Takayoshi, R. Jinno, S. Iwamoto. Fabrication of (100) Thin Film β-Ga2O3 on Insulator towards Optical Applications. 第86回応用物理学会 秋季学術講演会. 2025.
  14. 大島 祐一, 四戸 孝. 極めて狭い窓幅のストライプマスクを用いたc面α-Ga2O3の選択横方向成長. 第86回応用物理学会秋季学術講演会. 2025.
  15. 大島 孝仁. 2.38 wt%TMAH現像液エッチングによる(001)面β-Ga2O3のステップ＆テラス表面形成. 第86回応用物理学会 秋季学術講演会. 2025.
  16. 大島 祐一, 大島 孝仁. O2供給下における(001) β-Ga2O3のHClガスエッチング. 第86回応用物理学会秋季学術講演会. 2025.
  17. ザオ ウェン, 陳 果, ZHANG, Zhaozong, KOIZUMI, Satoshi, LIAO, Meiyong. High-quality Factor Diamond MEMS Resonators for Ultra-precise Thermometry. 35th International Conference on Diamond and Carbon Materials (ICDCM 2025). 2025. Open Access
  18. OSHIMA, Takayoshi, OSHIMA, Yuichi. Near-vertical non-plasma HCl gas etching on (011) β-Ga2O3. The 8th U.S. Gallium Oxide Workshop (GOX 2025). 2025.
  19. OSHIMA, Takayoshi, OSHIMA, Yuichi. Crystallographic HCl gas etching for fabrication of β-Ga2O3/air-gap structures on (100) substrates. The 8th U.S. Workshop on Gallium Oxide. 2025.
  20. NABATAME, Toshihide, IROKAWA, Yoshihiro, 澤田 朋実, 三浦 博美, 宮本 真奈美, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Structural change of Ga2O3 layer formed on GaN(0001) substrate under various fabrication conditions. THERMEC'2025. 2025. 招待講演
  21. SASAMA, Yosuke. Enhanced channel mobility of hydrogen-terminated diamond field-effect transistors utilizing a hexagonal boron nitride gate insulator. The 10th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2025). 2025. 招待講演
  22. Jona Gr¨umbel, OSHIMA, Yuichi, R¨udiger Goldhahn, Martin Feneberg. Determination of electronic structure parameters from spectroscopic ellipsometry: A case study on non-degenerate ScN. 10th International Conference on Spectroscopic Ellipsometry (ICSE-10). 2025.
  23. OSHIMA, Yuichi, 四戸 孝. Selective Area Growth of m-plane α-Ga2O3 by Halide Vapor Phase Epitaxy. Compound Semiconductor Week 2025 (CSW2025). 2025.
  24. 顧 克云, ジャン ジロン, Jian Huang, KOIDE, Yasuo, LIAO, Meiyong. Ultrahigh Gain Diamond Deep-ultraviolet Photodetector Due to Surface Hydrogen Termination and Deep defects. The 18th International Conference on New Diamond and Nano Carbons (NDNC 2025). 2025. Open Access
  25. 陳 果, ザオ ウェン, 顧 克云, KOIZUMI, Satoshi, KOIDE, Yasuo, LIAO, Meiyong. High Quality Factor Single-Crystal Diamond NEMS Cantilevers Fabricated by A Smart-Cut Method. The 18th International Conference on New Diamond and Nano Carbons (NDNC 2025). 2025. Open Access
  26. 顧 克云, ジャン ジロン, ザオ ウェン, 陳 果, KOIDE, Yasuo, KOIZUMI, Satoshi, LIAO, Meiyong. Revealing the Surface Adsorbates of Diamond Using MEMS Resonators. The 18th International Conference on New Diamond and Nano Carbons (NDNC 2025). 2025. Open Access
  27. YAMAGUCHI, Takahide, HINO, Koki, MOHAMMAD, Monish, SASAMA, Yosuke. New device architectures for high-mobility hydrogen-terminated diamond field-effect transistors. 18th International Conference on New Diamond and Nano Carbons (NDNC2025). 2025.
  28. ザオ ウェン, TERAJI, Tokuyuki, KOIZUMI, Satoshi, KOIDE, Yasuo, LIAO, Meiyong. Ultra-High-Resolution Thermometer Based on Diamond MEMS. The 18th International Conference on New Diamond and Nano Carbons (NDNC 2025). 2025. Open Access
  29. MOHAMMAD, Monish, HINO, Koki, SASAMA, Yosuke, 浦上 真聡, 太田 岳宏, 光永 尚人, 坂井 晴香, SAKAMOTO, Kenji, 髙倉 健一郎, YAMAGUCHI, Takahide. Low Interface-State-Density Gate Stacks for High-Mobility Hydrogen-Terminated Diamond FETs: A Scalable Fabrication Route. 18th International Conference on New Diamond and Nano Carbons (NDNC 2025). 2025.
  30. LIAO, Meiyong, ザオ ウェン, KOIZUMI, Satoshi. Diamond CMOS technology. The 18th International Conference on New Diamond and Nano Carbons (NDNC 2025). 2025. 招待講演 Open Access
  31. SASAMA, Yosuke, IWASAKI, Takuya, MOHAMMAD, Monish, IMURA, Masataka, WATANABE, Kenji, TANIGUCHI, Takashi, YAMAGUCHI, Takahide. High-mobility diamond field-effect transistors utilizing a hexagonal boron nitride gate insulator. The 2nd International Conference on Advanced Functional Materials (ICAFM 2025 KATHMANDU). 2025. 招待講演
  32. MOHAMMAD, Monish, HINO, Koki, SASAMA, Yosuke, 浦上 真聡, 太田 岳宏, 光永 尚人, 坂井 晴香, SAKAMOTO, Kenji, 髙倉 健一郎, YAMAGUCHI, Takahide. Enabling Scalable Fabrication of High-Mobility Hydrogen-Terminated Diamond FETs. Hasselt Diamond Workshop 2025 - SBDD XXIX. 2025.
  33. 蔭浦 泰資, SASAMA, Yosuke, 山田圭介, 木村晃介, 小野田忍, YAMAGUCHI, Takahide. Surface transfer doping of diamond probed by nitrogen-vacancy centers. Hasselt Diamond Workshop 2025 - SBDD XXIX. 2025.
  34. HINO, Koki, SASAMA, Yosuke, MOHAMMAD, Monish, YAMAGUCHI, Takahide. Electrical conduction at the interface of single crystal α-MoO3/hydrogen-terminated diamond heterostructure. Hasselt Diamond Workshop 2025 - SBDD XXIX. 2025.
  35. 大島 孝仁, 大島 祐一. (011)面β-Ga2O3上のHCl ガスエッチング特性. 2025年 第72回応用物理学会春季学術講演会. 2025.
  36. 清水悠吏, 大島 孝仁, 衣斐豊祐, 髙橋勲, 金子健太郎. ルチル構造二酸化ゲルマニウム(r-GeO2)のショットキーバリアダイオード特性. 2025年 第72回応用物理学会春季学術講演会. 2025.
  37. 大島 孝仁, 大島 祐一. 結晶異方性ガスエッチングによる(100) β-Ga2O3上のエアブリッジ作製. 2025年 第72回応用物理学会春季学術講演会. 2025.
2024
  1. NABATAME, Toshihide, IROKAWA, Yoshihiro, 澤田 朋実, 宮本 真奈美, 三浦 博美, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Characteristics of beta-Ga2O3/Al2O3/Pt capacitors with modified Ga2O3 surface using dummy SiO2 technique. 55th IEEE Semiconductor Interface Specialists Conference (SISC 2024). 2024.
  2. 顧 克云, ジャン ジロン, 陳 果, ザオ ウェン, Jian Huang, KOIZUMI, Satoshi, KOIDE, Yasuo, LIAO, Meiyong. Disclosing surface adsorptions of oxygen- and hydrogen-terminated diamond via MEMS. 第３８回ダイヤモンドシンポジウム. 2024. Open Access
  3. 日野 晃貴, 笹間 陽介, モハマド モニッシュ, 山口 尚秀. α-MoO3/水素終端ダイヤモンドヘテロ構造の転写法による作製. 第38回ダイヤモンドシンポジウム. 2024.
  4. ザオ ウェン, 顧 克云, 陳 果, ジャン ジロン, KOIZUMI, Satoshi, KOIDE, Yasuo, LIAO, Meiyong. Frequency Stability of Higher Order Modes Diamond MEMS Resonator. 第３８回ダイヤモンドシンポジウム. 2024. Open Access
  5. 大島 孝仁, 大島 祐一, 中込 真二. (-102)β-Ga2O3基板上のホモ・ヘテロエピタキシとプラズマフリー微細加工. 第53回結晶成長国内会議（JCCG-53）. 2024. 招待講演
  6. 川村 史朗, 村田 秀信, 山田 直臣. 高圧下複分解反応を用いた多元系Mn窒化物合成. 第65回 高圧討論会. 2024.
  7. 宮川 仁, 川村 史朗, 遊佐 斉. 超高圧力下パルス放電焼結法によるNaCl 型TaN焼結体の構造組織制御の試みII. 第65回高圧討論会. 2024.
  8. Masahiro HARA, NABATAME, Toshihide, 澤田 朋実, 宮本 真奈美, 三浦 博美, IROKAWA, Yoshihiro, Tsunenobu Kimoto, KOIDE, Yasuo. Crystal-face-dependent electron trapping behavior under high-field stress in Al2O3/GaN MOS structures fabricated through a dummy SiO2 process. 12th International Workshop on Nitride Semiconductors. 2024.
  9. IMURA, Masataka, OSHIMA, Takayoshi, OSHIMA, Yuichi. Fabrication of reverse tapered GaN edge structures for positive beveled edge termination. International Workshop on Nitride Semiconductors (IWN2024). 2024.
  10. 秩父重英, 嶋紘平, 上殿明良, 石橋章司, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 渡邉浩崇, 田中敦之, 本田善央, 須田淳, 天野浩, 加地徹, NABATAME, Toshihide, IROKAWA, Yoshihiro, KOIDE, Yasuo. Capture coefficients for minority carriers of the major midgap recombination centers in the state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. 12th International Workshop on Nitride Semiconductors. 2024.
  11. 大島 孝仁, 井村 将隆, 大島 祐一. 格子整合AlInN上GaNの逆テーパー型メサ形成の検討. 第85回応用物理学会秋季学術講演会. 2024.
  12. NABATAME, Toshihide, 澤田 朋実, IROKAWA, Yoshihiro, 宮本 真奈美, 三浦 博美, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Improved electrical properties of -Ga2O3/Al2O3/Pt capacitors with modified Ga2O3. The 2024 Fall Meeting of the European Materials Research Society (E-MRS). 2024.
  13. 顧 克云, ジャン ジロン, ザオ ウェン, 陳 果, Jian Huang, KOIZUMI, Satoshi, KOIDE, Yasuo, LIAO, Meiyong. Effect of Oxygen Terminal Surface Adsorption Layer on Energy Dissipation in Single-Crystal Diamond MEMS. 第85回応用物理学会秋季学術講演会. 2024. Open Access
  14. LIAO, Meiyong, KOIZUMI, Satoshi. N-channel diamond field-effect transistors. 34th International Conference on Diamond and Carbon Materials. 2024. 招待講演 Open Access
  15. KOIDE, Yasuo, IROKAWA, Yoshihiro, NABATAME, Toshihide, MITSUISHI, Kazutaka. Oxide interface characterization of n/p-GaN for power electronics. 66th Electronic Materials Conference (EMC) 2024. 2024.
  16. 大島 孝仁. プラズマを用いない酸化ガリウムの微細加工方法. 新技術説明会. 2024.
  17. F. Massabuau, D. Nicol, M. Maruzane, L. Penman, T. Aldakhil, P. Edwards, R. Martin, OSHIMA, Yuichi, P. Chalker, S. Reynolds. Luminescence and photoelectrical investigation of α-phase Ga2O3. 2nd International Conference On Spectroscopy In Materials Science – 2024 (ICOSIMS-2024). 2024. 招待講演
  18. TAKANE, Hitoshi, OSHIMA, Takayoshi, HARADA, Takayuki. Lattice-matching epitaxy of rutile-type GexSn1−xO2 alloy films on TiO2 substrates for device applications. Compound Semiconductor Week 2024. 2024.
  19. SASAMA, Yosuke, IWASAKI, Takuya, IMURA, Masataka, WATANABE, Kenji, TANIGUCHI, Takashi, YAMAGUCHI, Takahide. Field-effect transistor based on CVD-grown diamond utilizing h-BN gate insulator. 17th International Conference on New Diamond and Nano Carbons (NDNC) 2024. 2024.
  20. JINNO Riena, OSHIMA, Takayoshi, OSHIMA, Yuichi. Growth of α-(Al,Ga)2O3 films lattice-matched to α-Cr2O3 by mist-CVD. International Workshop on Gallium Oxide and Related Materials 2024 (IWGO2024). 2024.
  21. OSHIMA, Takayoshi, OSHIMA, Yuichi, Shinji Nakagomi. Structural characterization of homoepitaxial and NiO heteroepitaxial films, and selective-area-grown/-etched structures on (-102) β-Ga2O3 substrates. International Workshop on Gallium Oxide and Related Materials 2024 (IWGO2024). 2024.
  22. L. Penman, Z. Johnston, OSHIMA, Yuichi, C. McAleese, M. Bosi, R. Fornari, F. Massabuau. Comparative study of the optical properties of α-, β-, and κ-Ga₂O₃. International Workshop on Gallium Oxide and Related Materials (IWGO 2024). 2024.
  23. OSHIMA, Takayoshi, TOGASHI Rie, OSHIMA, Yuichi. N2-diluted H2 gas etching of (-102) β-Ga2O3 under atmospheric pressure. International Workshop on Gallium Oxide and Related Materials 2024 (IWGO2024). 2024.
  24. M. Maruzane, OSHIMA, Yuichi, O. Makydonska, P. Edwards, R. Martin, F. Massabuau. Cathodoluminescence study of dislocations in ELOG α-Ga2O3. International Workshop on Gallium Oxide and Related Materials (IWGO) 2024. 2024.
  25. LIAO, Meiyong, KOIZUMI, Satoshi. Semiconductor diamond photonics, electronics, and MEMS. International Union of Materials Research Societies – 18th International Conference on Electronic Materials 2024 (IUMRS-ICEM 2024). 2024. 招待講演 Open Access
  26. 陳 果, ジャン ジロン, 顧 克云, SANG, Liwen, KOIZUMI, Satoshi, 戸田雅也, KOIDE, Yasuo, LIAO, Meiyong. High-order resonance of single-crystal diamond MEMS with high-quality factor at high temperatures. 19th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2024) . 2024.
  27. ジャン ジロン, 顧 克云, 陳 果, KOIDE, Yasuo, KOIZUMI, Satoshi, LIAO, Meiyong. Diamond NEMS Resonators for Real-Time Dual Sensing of Magnetic Fields and Temperatures up to 500℃. 19th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2024) . 2024.
  28. 顧 克云, ジャン ジロン, 陳 果, SANG, Liwen, Jian Huang, KOIDE, Yasuo, LIAO, Meiyong. Ultrahigh Responsivity of Diamond-based Solar-blind Photodetectors Using Hydrogen Plasma Treatment. 19th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2024) . 2024. Open Access
  29. 笹間 陽介, 岩崎 拓哉, 井村 将隆, 渡邊 賢司, 谷口 尚, 山口 尚秀. CVD成膜したダイヤモンド上に作製したh-BNゲート絶縁体を用いた電界効果トランジスタ. 2024年第71回応用物理学会春季学術講演会. 2024.
  30. 秩父重英, 生田目 俊秀, 色川 芳宏, 小出 康夫. GaN 成長層･Mg イオン注入層の室温フォトルミネッセンス寿命 (II). 2024年　第71回応用物理学会春季学術講演会. 2024.
  31. 大島 孝仁, 井村 将隆, 大島 祐一, 大石 敏之. GaN正ベベル終端形成のための選択成長結晶に対する逆テーパーエッチングの提案. 2024年 第71回応用物理学会春季学術講演会. 2024.
  32. 神野 莉衣奈, 大島 孝仁, 大島 祐一. α-Cr2O3基板に格子整合したα-(Al,Ga)2O3の成長. 2024年 第71回応用物理学会春季学術講演会. 2024.
  33. 大島 孝仁, 富樫 理恵, 大島 祐一. (-102) β-Ga2O3への大気圧下での窒素希釈水素ガスエッチング. 2024年 第71回応用物理学会春季学術講演会. 2024.
  34. 陳 果, ジャン ジロン, 顧 克云, SANG, Liwen, KOIZUMI, Satoshi, KOIDE, Yasuo, Zhaohui Huang, LIAO, Meiyong. Air Damping Effect on Quality-Factor in High-Order Resonance Modes of Single-Crystal Diamond Microcantilevers. 2024年第71回応用物理学会春季学術講演会. 2024.
  35. 大島 孝仁, 中込 真二. (-102)面β-Ga2O3基板上NiO膜のエピタキシャル構造. 2024年 第71回応用物理学会春季学術講演会. 2024.
  36. ジャン ジロン, 顧 克云, 陳 果, SANG, Liwen, KOIDE, Yasuo, KOIZUMI, Satoshi, LIAO, Meiyong. Diamond MEMS resonators for real-time dual sensing of magnetic fields and temperatures up to 300℃. 2024年第71回応用物理学会春季学術講演会. 2024.
  37. 秩父重英, 生田目 俊秀, 色川 芳宏, 小出 康夫. GaN 成長層･Mg イオン注入層の室温フォトルミネッセンス寿命 (III). 2024年　第71回応用物理学会春季学術講演会. 2024.
  38. Stefan Wolf, Jona Grümbel, OSHIMA, Yuichi, Christopher Lüttich, Florian Hörich, Armin Dadgar, Martin Feneberg, Rüdiger Goldhahn. Multiphonon Raman scattering in rocksalt ScN. Annual Conference of the DPG and DPG Spring Meeting. 2024.
  39. IMURA, Masataka, Manabu Togawa, LIAO, Meiyong, KOIDE, Yasuo. Development of Highly Tolerant Diamond Schottky Barrier Photodiodes for Deep- Ultraviolet Xenon Excimer Lamp and Protons Detection. ISPlasma2024/IC-PLANTS2024/APSPT-13. 2024. 招待講演
  40. LIAO, Meiyong, ジャン ジロン, サン フアンイン, KOIZUMI, Satoshi, KOIDE, Yasuo, ウ ハイファ, 陳 果. High-reliability diamond MEMS: from concept to sensing applications. The International Conference on the Science and Technology for Advanced Ceramics (STAC) 2024. 2024.
  41. 陳 果, ジャン ジロン, 顧 克云, SANG, Liwen, KOIZUMI, Satoshi, KOIDE, Yasuo, Zhaohui Huang, LIAO, Meiyong. Smart-Cut Method for Diamond NEMS Fabrication by Efficient Oxygen Etching. The International Conference on the Science and Technology for Advanced Ceramics (STAC) 2024. 2024.
  42. LIU, Jiangwei, 岡村 雅之, 増子 尚徳, IMURA, Masataka, LIAO, Meiyong, KOIDE, Yasuo. Super-High Dielectric Constant AlOx/TiOy Nanolaminates: Formation and Mechanism Discussion. STAC - D2MatE 2024. 2024.
  43. ジャン ジロン, 顧 克云, 陳 果, KOIDE, Yasuo, KOIZUMI, Satoshi, LIAO, Meiyong. Diamond microresonators with on-chip actuation and sensing for magnetic sensing at high temperatures. The International Conference on the Science and Technology for Advanced Ceramics (STAC) 2024. 2024.
  44. 生田目 俊秀, 澤田 朋実, 色川 芳宏, 宮本 真奈美, 三浦 博美, 小出 康夫, 塚越 一仁. SiO2ダミープロセスを用いたc及びm面のGaN/Al2O3/PtキャパシタのPBS特性の改善. 第29回 電子デバイス界面テクノロジー研究会. 2024.
  45. 大島 孝仁, 大島 祐一. ファセット形成を利用したβ-Ga2O3の微細加工. 第15回研究会「ワイドギャップパワー半導体：β-Ga2O3とダイヤモンド」. 2024. 招待講演
2023
  1. NABATAME, Toshihide, 澤田 朋実, IROKAWA, Yoshihiro, 宮本 真奈美, 三浦 博美, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Improvement of PBS properties for c- and m-GaN/Al2O3/Pt capacitors using a dummy SiO2 layer. 54th IEEE Semiconductor Interface Specialists Conference. 2023.
  2. KAWAMURA, Fumio, 村田 秀信, YUSA, Hitoshi. Synthesis of novel ternary nitrides using the high-pressure metathesis reaction. MRM2023/IUMRS-ICA2023. 2023.
  3. LIAO, Meiyong. Diamond as an extreme semiconductor for electronics and MEMS. The 4th Asian Pacific Conference on Chemistry of Materials (APCCOM2023). 2023. 招待講演
  4. 䕃浦泰資, 笹間 陽介, 山口 尚秀. NV センターを利用した水素終端ダイヤモンドにおける表面トランスファードーピング機構の解析. 第３７回ダイヤモンドシンポジウム. 2023.
  5. 笹間 陽介, 渡邊 賢司, 谷口 尚, 山口 尚秀. 自己整合ゲート電極を有する水素終端ダイヤモンド電界効果トランジスタ. 第37回ダイヤモンドシンポジウム. 2023.
  6. 小泉 聡, 廖 梅勇. リンドープn型ダイヤモンドを用いたnチャネルMOSFETの作製. 第３７回ダイヤモンドシンポジウム. 2023.
  7. 廖 梅勇, ジャン ジロン, 陳 果, 小出 康夫, 戸田　雅也, 小泉 聡. オンチップダイヤモンドMEMS 磁気トランスデューサ. 第３７回ダイヤモンドシンポジウム. 2023.
  8. 川村 史朗, 村田 秀信, 牧内 楓, 山田 直臣. 高圧下における複分解反応を用いた様々な窒化物合成. 第33回 日本MRS年次大会. 2023. 招待講演
  9. 尾谷 卓史, OSHIMA, Yuichi. Realization of high-resistive Ni-doped GaN crystal by hydride vapor phase epitaxy. The 14th International Conference on Nitride Semiconductors (ICNS-14). 2023.
  10. Martin Feneberg, OSHIMA, Yuichi. Optical properties of rocksalt ScN. The 14th International Conference on Nitride Semiconductors (ICNS-14). 2023.
  11. 尾谷 卓史, OSHIMA, Yuichi. Crystallization of high-resistivity Zn-doped GaN monocrystal via hydride vapor phase epitaxy. The 14th International Conference on Nitride Semiconductors (ICNS-14). 2023.
  12. SASAMA, Yosuke. High-mobility hydrogen-terminated diamond transistors with a reduced surface acceptor density. 2023 Taiwan-Japan Workshop on Crystal Growth, Analysis and Calculation (TJ-CGAC) . 2023. 招待講演
  13. 川村 史朗. GaN分解温度・圧力の加圧環境依存性に関する検討. 第64回高圧討論会. 2023.
  14. NABATAME, Toshihide, IROKAWA, Yoshihiro, 澤田 朋実, 宮本 真奈美, 三浦 博美, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Improvement of characteristics for n-GaN/Al2O3/Pt capacitor with the GaN surface modified by the dummy SiO2 process. 2023 International Workshop on Dielectric Thin Films For Future Electron Devices. 2023.
  15. NABATAME, Toshihide, 澤田 朋実, IROKAWA, Yoshihiro, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Characteristics of GaN/High-k capacitors under positive bias stress. 244th ECS Meeting. 2023. 招待講演
  16. 大島 孝仁, 大島 祐一. (−102)面β-Ga2O3基板に対する選択成長と選択エッチング. 第84回応用物理学会 秋季学術講演会. 2023.
  17. 大島 祐一, 大島 孝仁. (-102 )面β-Ga2O3基板上のホモエピタキシャル成長. 第84回応用物理学会 秋季学術講演会. 2023.
  18. 永井 武彦, 村田 秀信, 川村 史朗, 反保 衆志, 寺田 教男. 光電子分光法を用いた(Ba,Sn)S薄膜の表面電子構造評価. 第84回 応用物理学会 秋季学術講演会. 2023.
  19. 牧内 楓, 川村 史朗, 矢田 舜一郎, ソン イェリン, 反保 衆志, 村田 秀信, 賈 軍軍, 山田 直臣. 圧力誘起相転移を利用した高圧相岩塩型MgSnN2薄膜の作製. 第84回 応用物理学会 秋季学術講演会. 2023. Open Access
  20. 高根 倫史, 大島 孝仁. r-GexSn1–xO2の成長機構とコヒーレント薄膜の作製. 第84回応用物理学会 秋季学術講演会. 2023. 招待講演
  21. 陳 果, ジャン ジロン, 顧 克云, KOIZUMI, Satoshi, Zhaohui Huang, LIAO, Meiyong. Effect of Energy Dissipation in Higher-Order Resonance on SCD MEMS Cantilevers Toward High f·Q. 2023年第84回応用物理学会秋季学術講演会. 2023.
  22. 大島 祐一, 大島 孝仁. (001) β-Ga2O3基板に対するHClガスエッチングの温度とHCl分圧依存性. 第84回応用物理学会 秋季学術講演会. 2023.
  23. 尾谷 卓史, 大島 祐一. HVPE法による高抵抗ZnドープGaN結晶成長. 第84回応用物理学会秋季学術講演会. 2023.
  24. ジャン ジロン, 陳 果, 顧 克云, KOIDE, Yasuo, KOIZUMI, Satoshi, LIAO, Meiyong. Effect of magnetostrictive film thickness for enhancing magnetic sensing performance of diamond MEMS resonator. 2023年第84回応用物理学会秋季学術講演会. 2023.
  25. LIAO, Meiyong. On-chip Diamond MEMS: concept and sensing applications. European Materials Research Society (E-MRS) 2023 Fall meeting. 2023. 招待講演
  26. LIU, Jiangwei, 岡村 雅之, 増子 尚徳, IMURA, Masataka, LIAO, Meiyong, KOIDE, Yasuo. Deposition and mechanism study for super-high dielectric constant AlOx/TiOy nanolaminates. 6th International Conference on MATERIALS SCIENCE & NANOTECHNOLOGY. 2023. 招待講演
  27. 澤田 朋実, NABATAME, Toshihide, 高橋 誠, IROKAWA, Yoshihiro, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Crystalline structure of Ga2O3 films on GaN(0001) and sapphire(0001) substrates after annealing process. THERMEC 2023 International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications. 2023.
  28. NABATAME, Toshihide, 澤田 朋実, IROKAWA, Yoshihiro, YASUFUKU, Hideyuki, NISHIO, Mitsuaki, KAWADA, Satoshi, KOIDE, Yasuo, TSUKAGOSHI, Kazuhito. Ga diffusion profile and electrical properties of GaN capacitors with high-k gate insulators. THERMEC 2023 International Conference on Processing & Manufacturing of Advanced MaterialsProcessing, Fabrication, Properties, Applications. 2023. 招待講演
  29. ジャン ジロン, 陳 果, Guangchao Chen, KOIZUMI, Satoshi, KOIDE, Yasuo, LIAO, Meiyong. ON-CHIP DIAMOND MEMS RESONATORS MAGNETIC SENSING UP TO 500℃. The 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2023). 2023. Open Access
  30. 陳 果, ジャン ジロン, SANG, Liwen, KOIDE, Yasuo, KOIZUMI, Satoshi, Zhaohui Huang, LIAO, Meiyong. Sensing the point defects by single-crystal diamond MEMS resonators. The 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2023). 2023.
  31. 井下 智史, 片宗 優貴, 和泉亮, 寺地 徳之, 渡邊 賢司, 小泉 聡. 熱フィラメントCVD法により成長したリン添加多結晶ダイヤモンド膜のカソードルミネッセンス評価. 第20回 Cat-CVD研究会. 2023.
  32. 小泉 聡. CVDダイヤモンドのn型ドーピング. 第20回 Cat-CVD研究会. 2023. 招待講演
  33. LIAO, Meiyong. Diamond-based photodetectors. The 6th International Workshop on Ultraviolet Materials and Devices. 2023. 招待講演
  34. TAKANE, Hitoshi, OSHIMA, Takayoshi. Selective area growth of r-SnO2 on r-TiO2 (110) substrate. Compound Semiconductor Week 2023. 2023.
  35. OSHIMA, Yuichi, 安藤 裕之. Reduction of dislocation density in α-Ga2O3 epilayers by maskless method. Compound Semiconductor Week 2023 (CSW2023). 2023.
  36. OSHIMA, Takayoshi, OSHIMA, Yuichi. HCl gas etching of (010) and (001) β-Ga2O3 substrates for the fabrication of plasma-damage-free trenches and fins. Compound Semiconductor Week 2023. 2023.
  37. 大島 孝仁, 大島 祐一. (001)面β-Ga2O3基板に対する異方性HClガスエッチング. 2023年 第70回応用物理学会春季学術講演会. 2023.
  38. 陳 果, ジャン ジロン, SANG, Liwen, KOIDE, Yasuo, KOIZUMI, Satoshi, LIAO, Meiyong. Effect of Ultra-High Vacuum Annealing and Hydrogen Plasma Treatment on the Resonance Properties of Single-Crystal Diamond MEMS Cantilevers. 2023年第70回応用物理学会春季学術講演会. 2023.
  39. 大島 祐一, 安藤 裕之. マスクレス手法によるα-Ga2O3の転位密度低減. 第70回応用物理学会 春季学術講演会. 2023.
  40. 蔭浦 泰資, 笹間 陽介, 寺地 徳之, 渡邊 賢司, 谷口 尚, 山田 圭介, 山口 尚秀. h-BN被覆による水素終端下・単一ダイヤモンドNV中心のスピン操作. 第70回応用物理学会春季学術講演会. 2023.
  41. 高根 倫史, 大島 孝仁. TiO2 (110)基板上のルチル型SnO2の選択成長. 2023年 第70回応用物理学会春季学術講演会. 2023.
  42. ジャン ジロン, 陳 果, SANG, Liwen, KOIDE, Yasuo, KOIZUMI, Satoshi, LIAO, Meiyong. High-temperature diamond MEMS magnetic sensor with on-chip actuation and sensing. 第70回応用物理学会春季学術講演会. 2023.
  43. 山本誠志郎, 大島 祐一. α-Ga2O3/4H-SiC直接接合の作製と界面構造の評価. 第70回応用物理学会 春季学術講演会. 2023.
  44. 大島 孝仁, 大島 祐一. (010)面β-Ga2O3基板に対する異方性HClガスエッチング. 2023年 第70回応用物理学会春季学術講演会. 2023.
  45. 高根 倫史, 大島 孝仁. TiO2基板上に選択成長したルチル型SnO2の成長ダイナミクス. 2023年日本セラミックス協会年会. 2023.
  46. 澤田 朋実, 生田目 俊秀, 高橋 誠, 女屋 崇, 色川 芳宏, 小出 康夫, 塚越 一仁. GaN(0001)基板上でのアモルファスGa2O3膜の熱処理による高配向結晶成長. 第28回 電子デバイス界面テクノロジー研究会. 2023.
  47. 大島 孝仁, 大島 祐一. β型酸化ガリウム半導体の選択成長. SATテクノロジー・ショーケース2023. 2023.

その他の文献

2026
  1. 笹間 陽介, 山口 尚秀. 水素終端ダイヤモンド/六方晶窒化ホウ素ヘテロ構造を用いた高移動度トランジスタ. NEW DIAMOND. 42 [2] 25-29. 2026. Open Access
2025
  1. Meiyong Liao. Single-Crystal Diamond MEMS for Extreme Sensors. 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2025 1-3. 2025. Open Access
  2. Zilong Zhang, Zhijian Zhao, Meiyong Liao, Takahito Ono, Masaya Toda. Diamond MEMS Magnetic Force Sensor Toward Femtonewton at Room Temperature. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). 2025 971-974. 2025. Open Access
  3. 廖 梅勇, 趙文, 小泉 聡. 水素終端リンドープダイヤモンド表面電気伝導を利用したpチャネル電界効果トランジスタ. NEW DIAMOND. 41 [2] 30-32. 2025. Open Access
  4. Zilong Zhang, Keyun Gu, Masaya Toda, Meiyong Liao. A perspective on diamond MEMS magnetic sensors. Applied Physics Letters. 126 [10] 100501-1-100501-12. 2025. Open Access
2024
  1. 廖 梅勇, 小泉 聡. nチャネルダイヤモンド金属-酸化膜-半導体電界効果トランジスタ. NEW DIAMOND. 40 [3] 28-29. 2024. Open Access
  2. 大島 孝仁. 結晶の異方性を利用した酸化ガリウム半導体の微細加工技術. 車載テクノロジー. 12 [2] 68-72. 2024. Open Access
  3. Zilong Zhang, Keyun Gu, Guo Chen, Yasuo Koide, Satoshi Koizumi, Meiyong Liao. Diamond NEMS Resonators for Real-Time Dual Sensing of Magnetic Fields and Temperatures up to 500°C. 2024 IEEE 19th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). 19 1-5. 2024. Open Access
2023
  1. 市川 公善, 小泉 聡, 寺地 徳之. ダイヤモンドホモエピタキシャル成長における薄膜 / 基板界面での転位変換. New diamond. 39 [1] 34-36. 2023.