SAMURAI - NIMS Researchers Database

HOME > Presentation > Detail

High-mobility diamond field-effect transistors utilizing a hexagonal boron nitride gate insulator

SASAMA, Yosuke, IWASAKI, Takuya, MOHAMMAD, Monish, IMURA, Masataka, WATANABE, Kenji, TANIGUCHI, Takashi, YAMAGUCHI, Takahide.
The 2nd International Conference on Advanced Functional Materials (ICAFM 2025 KATHMANDU). March 27, 2025-March 29, 2025. Invited

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2025-04-22 03:07:02 +0900 Updated at: 2025-04-22 03:07:02 +0900

    ▲ Go to the top of this page