Epitaxial lateral overgrowth of <i>m</i> -plane α-Ga <sub>2</sub> O <sub>3</sub> by halide vapor phase epitaxy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Epitaxial lateral overgrowth of m -plane α-Ga ₂ O ₃ by halide vapor phase epitaxy

Yuichi Oshima, Takashi Shinohe.

Science and Technology of Advanced Materials 26 [1] 2485869. 2025.

https://doi.org/10.1080/14686996.2025.2485869

Open Access Informa UK Limited (Publisher) Materials Data Repository (MDR)

NIMS著者

大島祐一

Materials Data Repository (MDR)上の本文・データセット

MDRavailable Epitaxial lateral overgrowth of <i>m</i> -plane α-Ga <sub>2</sub> O <sub>3</sub> by halide vapor phase epitaxy

作成時刻: 2025-04-24 03:06:42 +0900 更新時刻: 2026-04-05 04:30:46 +0900

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