HOME > 論文 > 書誌詳細Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETsYoshihiro Irokawa, Kazutaka Mitsuishi, Takatomi Izumi, Junya Nishii, Toshihide Nabatame, Yasuo Koide. ECS Journal of Solid State Science and Technology 12 [5] 055007. 2023.https://doi.org/10.1149/2162-8777/acd1b4 Open Access The Electrochemical Society (Publisher) NIMS著者色川 芳宏三石 和貴生田目 俊秀小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2023-06-02 03:19:05 +0900更新時刻: 2024-09-05 10:06:05 +0900
