HOME > Article > DetailGate-Bias-Induced Threshold Voltage Shifts in GaN FATFETsYoshihiro Irokawa, Kazutaka Mitsuishi, Takatomi Izumi, Junya Nishii, Toshihide Nabatame, Yasuo Koide. ECS Journal of Solid State Science and Technology 12 [5] 055007. 2023.https://doi.org/10.1149/2162-8777/acd1b4 Open Access The Electrochemical Society (Publisher) NIMS author(s)IROKAWA, YoshihiroMITSUISHI, KazutakaNABATAME, ToshihideFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2023-06-02 03:19:05 +0900 Updated at: 2026-02-22 09:18:43 +0900
