HOME > 論文 > 書誌詳細P-Channel MOSFETs on Phosphorous-Doped n-Type DiamondWen Zhao, Satoshi Koizumi, Meiyong Liao. IEEE Electron Device Letters 45 [12] 2268-2271. 2024.https://doi.org/10.1109/led.2024.3485683 Open Access Institute of Electrical and Electronics Engineers (IEEE) (Publisher) Materials Data Repository (MDR) NIMS著者小泉 聡廖 梅勇Materials Data Repository (MDR)上の本文・データセットMDRavailable P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond 作成時刻: 2024-12-02 03:15:59 +0900更新時刻: 2025-02-05 04:29:59 +0900