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分野別にみる

論文の分野はクラリベイト・アナリティクス社のESI分類を参考に分類し(Materials Science, Physics, Chemistry, Engineering, Biology)、ほか発表文献タイトル・抄録などから2006年以降刊行の論文検索を行うことができます。

最終更新時刻: 2021年03月03日

10件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors. IEEE Electron Device Letters. 40 [11] (2019) 1748-1751 10.1109/led.2019.2942967
  • Abdullah Alharbi, Zhujun Huang, Takashi Taniguchi, Kenji Watanabe, Davood Shahrjerdi. Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS2 Transistors. IEEE Electron Device Letters. 40 [1] () 135-138 10.1109/led.2018.2883808
  • Jiangwei Liu, Hirotaka Ohsato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe, Yasuo Koide. Logic Circuits With Hydrogenated Diamond Field-Effect Transistors. IEEE Electron Device Letters. 38 [7] (2017) 922-925 10.1109/led.2017.2702744
  • Sangwoo Kang, Babak Fallahazad, Kayoung Lee, Hema Movva, Kyounghwan Kim, Chris M. Corbet, Takashi Taniguchi, Kenji Watanabe, Luigi Colombo, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET. IEEE Electron Device Letters. 36 [4] (2015) 405-407 10.1109/led.2015.2398737
  • Yong Xu, Chuan Liu, William Scheideler, Songlin Li, Wenwu Li, Yen-Fu Lin, Francis Balestra, Gerard Ghibaudo, Kazuhito Tsukagoshi. Understanding Thickness-Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise. IEEE Electron Device Letters. 34 [10] (2013) 1298-1300 10.1109/led.2013.2277613
  • Yong Xu, William Scheideler, Chuan Liu, Francis Balestra, Gerard Ghibaudo, Kazuhito Tsukagoshi. Contact Thickness Effects in Bottom-Contact Coplanar Organic Field-Effect Transistors. IEEE Electron Device Letters. 34 [4] (2013) 535-537 10.1109/led.2013.2244059
  • Han Wang, Thiti Taychatanapat, Allen Hsu, Kenji Watanabe, Takashi Taniguchi, Pablo Jarillo-Herrero, Tomas Palacios. BN/Graphene/BN Transistors for RF Applications. IEEE Electron Device Letters. 32 [9] (2011) 1209-1211 10.1109/led.2011.2160611
  • S D Wang, Y Yan, K Tsukagoshi. Transition-Voltage Method for Estimating Contact Resistance in Organic Thin-Film Transistors. IEEE Electron Device Letters. 31 [5] (2010) 509-511 10.1109/led.2010.2044137
  • N. Umezawa, K. Shiraishi, K. Torii, M. Boero, T. Chikyow, H. Watanabe, K. Yamabe, T. Ohno, K. Yamada, Y. Nara. Role of Nitrogen Atoms in Reduction of Electron Charge Traps in Hf-Based High- $\kappa$ Dielectrics. IEEE Electron Device Letters. 28 [5] (2007) 363-365 10.1109/led.2007.894655
  • T. Yamada, A. Sawabe, S. Koizumi, J. Itoh, K. Okano. Uniform electron emission from a nitrogen-doped diamond-based electron emitter fabricated by the sintering technique. IEEE Electron Device Letters. 21 [11] (2000) 531-533 10.1109/55.877201
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