SAMURAI - NIMS Researchers Database

HOME > 研究者を検索 > 分野別にみる

分野別にみる

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2022年05月28日

12件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Junya Yaita, Koichi Fukuda, Atsushi Yamada, Takuya Iwasaki, Shu Nakaharai, Junji Kotani. Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures. IEEE Electron Device Letters. 42 [11] (2021) 1592-1595 10.1109/led.2021.3116595
  • Yu-Shien Shiah, Kihyung Sim, Shigenori Ueda, Junghwan Kim, Hideo Hosono. Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs. IEEE Electron Device Letters. 42 [9] (2021) 1319-1322 10.1109/led.2021.3101654
  • Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors. IEEE Electron Device Letters. 40 [11] (2019) 1748-1751 10.1109/led.2019.2942967
  • Abdullah Alharbi, Zhujun Huang, Takashi Taniguchi, Kenji Watanabe, Davood Shahrjerdi. Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS2 Transistors. IEEE Electron Device Letters. 40 [1] (2019) 135-138 10.1109/led.2018.2883808
  • Jiangwei Liu, Hirotaka Ohsato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe, Yasuo Koide. Logic Circuits With Hydrogenated Diamond Field-Effect Transistors. IEEE Electron Device Letters. 38 [7] (2017) 922-925 10.1109/led.2017.2702744
  • Sangwoo Kang, Babak Fallahazad, Kayoung Lee, Hema Movva, Kyounghwan Kim, Chris M. Corbet, Takashi Taniguchi, Kenji Watanabe, Luigi Colombo, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET. IEEE Electron Device Letters. 36 [4] (2015) 405-407 10.1109/led.2015.2398737
  • Yong Xu, Chuan Liu, William Scheideler, Songlin Li, Wenwu Li, Yen-Fu Lin, Francis Balestra, Gerard Ghibaudo, Kazuhito Tsukagoshi. Understanding Thickness-Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise. IEEE Electron Device Letters. 34 [10] (2013) 1298-1300 10.1109/led.2013.2277613
  • Yong Xu, William Scheideler, Chuan Liu, Francis Balestra, Gerard Ghibaudo, Kazuhito Tsukagoshi. Contact Thickness Effects in Bottom-Contact Coplanar Organic Field-Effect Transistors. IEEE Electron Device Letters. 34 [4] (2013) 535-537 10.1109/led.2013.2244059
  • Han Wang, Thiti Taychatanapat, Allen Hsu, Kenji Watanabe, Takashi Taniguchi, Pablo Jarillo-Herrero, Tomas Palacios. BN/Graphene/BN Transistors for RF Applications. IEEE Electron Device Letters. 32 [9] (2011) 1209-1211 10.1109/led.2011.2160611
  • S D Wang, Y Yan, K Tsukagoshi. Transition-Voltage Method for Estimating Contact Resistance in Organic Thin-Film Transistors. IEEE Electron Device Letters. 31 [5] (2010) 509-511 10.1109/led.2010.2044137
  • ▲ページトップへ移動