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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年06月12日

19件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Takehiro Shimaoka, Hitoshi Umezawa, Gwenole Jacopin, Satoshi Koizumi, Takeshi Fujiwara, Julien Pernot. Temperature Dependence of Betavoltaic Cell Performance of Diamond pn Junction Diode. IEEE Electron Device Letters. 45 [1] (2024) 96-99 10.1109/led.2023.3333803
  • Haonan Liu, Lixin Jing, Kexin He, Dandan Qu, Yushan Li, Takeo Minari, Ruiqiang Tao, Xubing Lu, Junming Liu. High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-Coated Hafnium Oxide Gate Dielectrics. IEEE Electron Device Letters. 44 [9] (2023) 1508-1511 10.1109/led.2023.3295594
  • Takehiro Shimaoka, Meiyong Liao, Satoshi Koizumi. n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C. IEEE Electron Device Letters. 43 [4] (2022) 588-591 10.1109/led.2022.3156149
  • S. Hitesh, Pushkar Dasika, Kenji Watanabe, Takashi Taniguchi, Kausik Majumdar. Integration of 3-Level MoS Multibridge Channel FET With 2D Layered Contact and Gate Dielectric. IEEE Electron Device Letters. 43 [11] (2022) 1993-1996 10.1109/led.2022.3206866
  • Cheng Chang, Yushan Li, Yan Zhang, Wentao Shuai, Haonan Liu, Ting Huang, Zhen Fan, Takeo Minari, Guofu Zhou, Ruiqiang Tao, Xubing Lu, Junming Liu. Electret/High-k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update. IEEE Electron Device Letters. 43 [9] (2022) 1467-1470 10.1109/led.2022.3189758
  • Junya Yaita, Koichi Fukuda, Atsushi Yamada, Takuya Iwasaki, Shu Nakaharai, Junji Kotani. Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures. IEEE Electron Device Letters. 42 [11] (2021) 1592-1595 10.1109/led.2021.3116595
  • Yu-Shien Shiah, Kihyung Sim, Shigenori Ueda, Junghwan Kim, Hideo Hosono. Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs. IEEE Electron Device Letters. 42 [9] (2021) 1319-1322 10.1109/led.2021.3101654
  • Toshiyuki Oishi, Kosuke Urata, Makoto Hashikawa, Kosuke Ajiro, Takayoshi Oshima. Microwave Power Rectification Using $\beta$ -Ga2O3 Schottky Barrier Diodes. IEEE Electron Device Letters. 40 [9] (2019) 1393-1395 10.1109/led.2019.2931793
  • Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors. IEEE Electron Device Letters. 40 [11] (2019) 1748-1751 10.1109/led.2019.2942967
  • Abdullah Alharbi, Zhujun Huang, Takashi Taniguchi, Kenji Watanabe, Davood Shahrjerdi. Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS2 Transistors. IEEE Electron Device Letters. 40 [1] (2019) 135-138 10.1109/led.2018.2883808 Open Access
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