| 24 article(s) found. Sorted by publication dates. (Help) | |
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| Shiho Nakamura, Zaoyang Lin, Daiki Tsuruoka, Takahiko Endo, Xiao Yu, Tsung-En Lee, Yasumitsu Miyata, Nobuyuki Aoki, Mengnan Ke. Characterization of Interface States in CVD Monolayer MoS
2
/Al
2
O
3
MOS Capacitors via the Conductance Method. IEEE Electron Device Letters. 47 [9] (2026) 1720-1723 10.1109/led.2026.3708092 Open Access | |
| Hanjun Cho, Masatake Tsuji, Shigenori Ueda, Hideo Hosono. Origin of Mobility Reduction in Thin a-IGZO TFTs and Its Improvement. IEEE Electron Device Letters. 47 [7] (2026) 1394-1397 10.1109/led.2026.3695312 Open Access | |
| Zhongyunshen Zhu, Hridibrata Pal, Aditya Dev Varma, Masataka Imura, Hironori Okumura, Tomás Palacios. Zr-Based Contacts to n-Type AlN With Improved Performance for Power and High-Temperature Electronics. IEEE Electron Device Letters. 47 [6] (2026) 1077-1080 10.1109/led.2026.3685167 Open Access | |
| Wen Zhao, Satoshi Koizumi, Meiyong Liao. P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond. IEEE Electron Device Letters. 45 [12] (2024) 2268-2271 10.1109/led.2024.3485683 Open Access | |
| Takehiro Shimaoka, Hitoshi Umezawa, Gwenole Jacopin, Satoshi Koizumi, Takeshi Fujiwara, Julien Pernot. Temperature Dependence of Betavoltaic Cell Performance of Diamond pn Junction Diode. IEEE Electron Device Letters. 45 [1] (2024) 96-99 10.1109/led.2023.3333803 Open Access | |
| Haonan Liu, Lixin Jing, Kexin He, Dandan Qu, Yushan Li, Takeo Minari, Ruiqiang Tao, Xubing Lu, Junming Liu. High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-Coated Hafnium Oxide Gate Dielectrics. IEEE Electron Device Letters. 44 [9] (2023) 1508-1511 10.1109/led.2023.3295594 | |
| Takehiro Shimaoka, Meiyong Liao, Satoshi Koizumi. n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C. IEEE Electron Device Letters. 43 [4] (2022) 588-591 10.1109/led.2022.3156149 | |
| S. Hitesh, Pushkar Dasika, Kenji Watanabe, Takashi Taniguchi, Kausik Majumdar. Integration of 3-Level MoS Multibridge Channel FET With 2D Layered Contact and Gate Dielectric. IEEE Electron Device Letters. 43 [11] (2022) 1993-1996 10.1109/led.2022.3206866 | |
| Cheng Chang, Yushan Li, Yan Zhang, Wentao Shuai, Haonan Liu, Ting Huang, Zhen Fan, Takeo Minari, Guofu Zhou, Ruiqiang Tao, Xubing Lu, Junming Liu. Electret/High-k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update. IEEE Electron Device Letters. 43 [9] (2022) 1467-1470 10.1109/led.2022.3189758 | |
| Junya Yaita, Koichi Fukuda, Atsushi Yamada, Takuya Iwasaki, Shu Nakaharai, Junji Kotani. Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures. IEEE Electron Device Letters. 42 [11] (2021) 1592-1595 10.1109/led.2021.3116595 | |
