HOME > 論文 > 書誌詳細High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-Coated Hafnium Oxide Gate DielectricsHaonan Liu, Lixin Jing, Kexin He, Dandan Qu, Yushan Li, Takeo Minari, Ruiqiang Tao, Xubing Lu, Junming Liu. IEEE Electron Device Letters 44 [9] 1508-1511. 2023.https://doi.org/10.1109/led.2023.3295594 NIMS著者三成 剛生Materials Data Repository (MDR)上の本文・データセット作成時刻: 2023-12-21 03:13:37 +0900更新時刻: 2024-04-02 07:25:23 +0900
