HOME > Article > DetailHigh Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-Coated Hafnium Oxide Gate DielectricsHaonan Liu, Lixin Jing, Kexin He, Dandan Qu, Yushan Li, Takeo Minari, Ruiqiang Tao, Xubing Lu, Junming Liu. IEEE Electron Device Letters 44 [9] 1508-1511. 2023.https://doi.org/10.1109/led.2023.3295594 NIMS author(s)MINARI, TakeoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2023-12-21 03:13:37 +0900 Updated at: 2026-10-08 08:55:05 +0900