Characterization of Interface States in CVD Monolayer MoS <sub>2</sub> /Al <sub>2</sub> O <sub>3</sub> MOS Capacitors via the Conductance Method | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Characterization of Interface States in CVD Monolayer MoS ₂ /Al ₂ O ₃ MOS Capacitors via the Conductance Method

Shiho Nakamura, Zaoyang Lin, Daiki Tsuruoka, Takahiko Endo, Xiao Yu, Tsung-En Lee, Yasumitsu Miyata, Nobuyuki Aoki, Mengnan Ke.

IEEE Electron Device Letters 47 [9] 1720-1723. 2026.

https://doi.org/10.1109/led.2026.3708092

Open Access Materials Data Repository (MDR)

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宮田耕充

Materials Data Repository (MDR)上の本文・データセット

MDRavailable Characterization of Interface States in CVD Monolayer MoS <sub>2</sub> /Al <sub>2</sub> O <sub>3</sub> MOS Capacitors via the Conductance Method

作成時刻: 2026-10-21 03:05:48 +0900 更新時刻: 2026-10-22 03:06:03 +0900

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