HOME > 論文 > 書誌詳細Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-HeterostructuresJunya Yaita, Koichi Fukuda, Atsushi Yamada, Takuya Iwasaki, Shu Nakaharai, Junji Kotani. IEEE Electron Device Letters 42 [11] 1592-1595. 2021.https://doi.org/10.1109/led.2021.3116595 NIMS著者岩崎 拓哉Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-11-09 03:36:15 +0900更新時刻: 2024-04-02 04:14:21 +0900
