- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
- プロフィール
- 研究概要
- ワードクラウド
- 人のつながり
研究内容
- Keywords
層状物質、グラフェン、２次元電子系、量子輸送、トランジスタ
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Takuya Iwasaki, Shu Nakaharai, Yutaka Wakayama, Kenji Watanabe, Takashi Taniguchi, Yoshifumi Morita, Satoshi Moriyama. Single-Carrier Transport in Graphene/hBN Superlattices. Nano Letters. 20 [4] (2020) 2551-2557 10.1021/acs.nanolett.9b05332
- Takuya Iwasaki, Yoshifumi Morita, Shu Nakaharai, Yutaka Wakayama, Eiichiro Watanabe, Daiju Tsuya, Kenji Watanabe, Takashi Taniguchi, Satoshi Moriyama. Fabrication of folded bilayer-bilayer graphene/hexagonal boron nitride superlattices. Applied Physics Express. 13 [3] (2020) 035003 10.35848/1882-0786/ab790d
- Takuya Iwasaki, Kosuke Endo, Eiichiro Watanabe, Daiju Tsuya, Yoshifumi Morita, Shu Nakaharai, Yutaka Noguchi, Yutaka Wakayama, Kenji Watanabe, Takashi Taniguchi, Satoshi Moriyama. Bubble-Free Transfer Technique for High-Quality Graphene/Hexagonal Boron Nitride van der Waals Heterostructures. ACS Applied Materials & Interfaces. 12 [7] (2020) 8533-8538 10.1021/acsami.9b19191
書籍
- NAKAHARAI, Shu. MX2 materials for functionality enhanced transistors. The Institution of Engineering and Technology, 2018
- 中払 周, 小川 真一, 塚越 一仁, 佐藤 信太郎, 横山 直樹. ウェハスケール・トップダウン加工でのグラフェントランジスタ試作. カーボンナノチューブ・グラフェンの 応用研究最前線. , 2016, 201-207.
- 塚越 一仁, 中払 周. グラフェンの伝導電荷極性制御と素子化の試み. グラフェンの機能と応用展望II. , 2012, 196-206.
口頭発表
- NAKAHARAI, Shu, Tomohiko Iijima, Shinich Ogawa, Shingo Suzuki, TSUKAGOSHI, Kazuhito, Shintaro Sato, Naoki Yokoyama. Electrostatically-Reversible Polarity of Dual-Gated Graphene Transistors with He Ion Irradiated Channel: Toward Reconfigurable CMOS Applications. IEEE International Electron Devices Meeting (IEDM). 2012
- NAKAHARAI, Shu. Carrier Type Control of Transition Metal Dichalcogenide Semiconductors for Advanced CMOS Applications. 2017 International Workshop on Dielectric Thin Films (IWDTF). 2017
- NAKAHARAI, Shu, T.Iijima, S.Ogawa, TSUKAGOSHI, Kazuhito, S.Sato, N.Yokoyama. Current On-Off Operation of Graphene Transistor with Dual Gates and He Ion Irradiated Channerent-rectification. ISCS2013. 2013
第二期開発予定
第二期開発予定