HOME > Article > DetailIntegration of 3-Level MoS Multibridge Channel FET With 2D Layered Contact and Gate DielectricS. Hitesh, Pushkar Dasika, Kenji Watanabe, Takashi Taniguchi, Kausik Majumdar. IEEE Electron Device Letters 43 [11] 1993-1996. 2022.https://doi.org/10.1109/led.2022.3206866 NIMS author(s)WATANABE, KenjiTANIGUCHI, TakashiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-11-02 03:23:48 +0900 Updated at: 2026-09-29 08:24:27 +0900
