HOME > Article > DetailP-Channel MOSFETs on Phosphorous-Doped n-Type DiamondWen Zhao, Satoshi Koizumi, Meiyong Liao. IEEE Electron Device Letters 45 [12] 2268-2271. 2024.https://doi.org/10.1109/led.2024.3485683 Open Access Institute of Electrical and Electronics Engineers (IEEE) (Publisher) Materials Data Repository (MDR) NIMS author(s)KOIZUMI, SatoshiLIAO, MeiyongFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond Created at: 2024-12-02 03:15:59 +0900Updated at: 2025-03-06 04:30:25 +0900
