HOME > 論文 > 書誌詳細Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistorYosuke Sasama, Takuya Iwasaki, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Yamaguchi Takahide. Applied Physics Letters 127 [14] 143502. 2025.https://doi.org/10.1063/5.0272041 Open Access AIP Publishing (Publisher) Materials Data Repository (MDR) NIMS著者笹間 陽介岩崎 拓哉井村 将隆渡邊 賢司谷口 尚山口 尚秀Materials Data Repository (MDR)上の本文・データセットMDRavailable Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor 作成時刻: 2025-10-15 03:09:22 +0900 更新時刻: 2026-03-20 04:33:23 +0900
