HOME > 論文 > 書誌詳細Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulatorYosuke Sasama, Takuya Iwasaki, Mohammad Monish, Kenji Watanabe, Takashi Taniguchi, Yamaguchi Takahide. Applied Physics Letters 125 [9] 092103. 2024.https://doi.org/10.1063/5.0224192 Open Access AIP Publishing (Publisher) Materials Data Repository (MDR) NIMS著者笹間 陽介岩崎 拓哉モハマド モニッシュ渡邊 賢司谷口 尚山口 尚秀Materials Data Repository (MDR)上の本文・データセットMDRavailable Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator 作成時刻: 2024-09-12 03:14:05 +0900更新時刻: 2024-11-14 08:49:01 +0900
