High-concentration Ge doping of (001) β-Ga <sub>2</sub> O <sub>3</sub> by halide vapor phase epitaxy beyond the practical Si doping limit | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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High-concentration Ge doping of (001) β-Ga ₂ O ₃ by halide vapor phase epitaxy beyond the practical Si doping limit

Yuichi Oshima, Takayoshi Oshima, Chia-Hung Lin, Kohei Sasaki.

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 27 [1] 2756746-1-2756746-10. 2026.

https://doi.org/10.1080/14686996.2026.2756746

Open Access Informa UK Limited (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2026-11-11 03:07:10 +0900 更新時刻: 2026-11-11 03:07:10 +0900

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