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Improvement of characteristics for n-GaN/Al2O3/Pt capacitor with the GaN surface modified by the dummy SiO2 process

2023 International Workshop on Dielectric Thin Films For Future Electron Devices. 2023.

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    作成時刻: 2023-10-31 03:14:38 +0900更新時刻: 2023-10-31 03:14:38 +0900

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