HOME > 論文 > 書誌詳細High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type DiamondMeiyong Liao, Huanying Sun, Satoshi Koizumi. Advanced Science 11 [13] 2306013. 2024.https://doi.org/10.1002/advs.202306013 Open Access Wiley (Publisher) Materials Data Repository (MDR) NIMS著者廖 梅勇小泉 聡Materials Data Repository (MDR)上の本文・データセットMDRavailable High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond 作成時刻: 2024-04-10 03:11:52 +0900更新時刻: 2024-05-01 03:12:06 +0900
