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High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Meiyong Liao, Huanying Sun, Satoshi Koizumi.

Advanced Science 11 [13] 2306013. 2024.

https://doi.org/10.1002/advs.202306013

Open Access Wiley (Publisher) Materials Data Repository (MDR)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Created at: 2024-04-10 03:11:52 +0900 Updated at: 2025-04-23 04:29:30 +0900

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