Realization of high-resistive Ni-doped GaN crystal by hydride vapor phase epitaxy
The 14th International Conference on Nitride Semiconductors (ICNS-14). 2023.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2023-12-11 03:16:09 +0900更新時刻: 2023-12-11 03:16:09 +0900