Rapid growth of a pit-free (011) β-Ga <sub>2</sub> O <sub>3</sub> homoepitaxial layer with very low residual Si and Cl concentrations by HCl-based halide vapor phase epitaxy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Rapid growth of a pit-free (011) β-Ga ₂ O ₃ homoepitaxial layer with very low residual Si and Cl concentrations by HCl-based halide vapor phase epitaxy

Yuichi Oshima, Takayoshi Oshima.

Science and Technology of Advanced Materials 27 [1] 2751773. 2026.

https://doi.org/10.1080/14686996.2026.2751773

Open Access Informa UK Limited (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Rapid growth of a pit-free (011) β-Ga <sub>2</sub> O <sub>3</sub> homoepitaxial layer with very low residual Si and Cl concentrations by HCl-based halide vapor phase epitaxy

作成時刻: 2026-11-11 03:07:09 +0900 更新時刻: 2026-11-12 03:06:20 +0900

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