HOME > Proceedings > Detail(Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias StressToshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi. ECS Transactions 109-117. 2023.https://doi.org/10.1149/11201.0109ecst NIMS author(s)NABATAME, ToshihideIROKAWA, YoshihiroTSUKAGOSHI, KazuhitoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2023-10-20 03:13:02 +0900 Updated at: 2026-10-08 08:51:21 +0900