HOME > 会議録 > 書誌詳細(Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias StressToshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi. ECS Transactions 109-117. 2023.https://doi.org/10.1149/11201.0109ecst NIMS著者生田目 俊秀色川 芳宏小出 康夫塚越 一仁Materials Data Repository (MDR)上の本文・データセット作成時刻: 2023-10-20 03:13:02 +0900更新時刻: 2025-03-19 07:10:16 +0900
