HOME > 論文 > 書誌詳細Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxyYuichi Oshima, Hiroyuki Ando, Takashi Shinohe. Applied Physics Express 16 [6] 065501. 2023.https://doi.org/10.35848/1882-0786/acddca Open Access IOP Publishing (Publisher) Materials Data Repository (MDR) NIMS著者大島 祐一Materials Data Repository (MDR)上の本文・データセットMDRavailable Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy 作成時刻: 2023-07-13 03:27:20 +0900 更新時刻: 2026-06-04 08:12:19 +0900
