Reduction of dislocation density in α-Ga<sub>2</sub>O<sub>3</sub> epilayers via rapid growth at low temperatures by halide vapor phase epitaxy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy

Yuichi Oshima, Hiroyuki Ando, Takashi Shinohe.

Applied Physics Express 16 [6] 065501. 2023.

https://doi.org/10.35848/1882-0786/acddca

NIMS著者

大島祐一

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2023-07-13 03:27:20 +0900更新時刻: 2024-04-27 03:03:50 +0900

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