HOME > 論文 > 書誌詳細Realization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase EpitaxyTakafumi Odani, Kenji Iso, Yuichi Oshima, Hirotaka Ikeda, Tae Mochizuki, Satoru Izumisawa. physica status solidi (b) 261 [11] 2300584. 2024.https://doi.org/10.1002/pssb.202300584 Open Access Wiley (Publisher) Materials Data Repository (MDR) NIMS著者大島 祐一Materials Data Repository (MDR)上の本文・データセットMDRavailable Realization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase Epitaxy 作成時刻: 2024-11-15 03:11:23 +0900 更新時刻: 2026-06-07 04:30:02 +0900
