HOME > Article > DetailRealization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase EpitaxyTakafumi Odani, Kenji Iso, Yuichi Oshima, Hirotaka Ikeda, Tae Mochizuki, Satoru Izumisawa. physica status solidi (b) 261 [11] 2300584. 2024.https://doi.org/10.1002/pssb.202300584 Open Access Wiley (Publisher) Materials Data Repository (MDR) NIMS author(s)OSHIMA, YuichiFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Realization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase Epitaxy Created at: 2024-11-15 03:11:23 +0900 Updated at: 2026-07-08 04:30:09 +0900
