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A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures

Masahiro Hara, Toshihide Nabatame, Yoshihiro Irokawa, Tomomi Sawada, Manami Miyamoto, Hiromi Miura, Tsunenobu Kimoto, Yasuo Koide.

Materials Science in Semiconductor Processing 196 109606. 2025.

https://doi.org/10.1016/j.mssp.2025.109606

Open Access Elsevier BV (Publisher) Materials Data Repository (MDR)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures

Created at: 2025-05-09 03:06:51 +0900 Updated at: 2026-09-26 04:34:13 +0900

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