HOME > 論文 > 書誌詳細A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structuresMasahiro Hara, Toshihide Nabatame, Yoshihiro Irokawa, Tomomi Sawada, Manami Miyamoto, Hiromi Miura, Tsunenobu Kimoto, Yasuo Koide. Materials Science in Semiconductor Processing 196 109606. 2025.https://doi.org/10.1016/j.mssp.2025.109606 Open Access Elsevier BV (Publisher) Materials Data Repository (MDR) NIMS著者生田目 俊秀色川 芳宏Materials Data Repository (MDR)上の本文・データセットMDRavailable A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures 作成時刻: 2025-05-09 03:06:51 +0900 更新時刻: 2025-06-11 04:30:42 +0900
