| 12件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Rahmat Hadi Saputro, Tatsuro Maeda, Ryo Matsumura, Naoki Fukata. Highly strained and heavily doped germanium thin films by non-equilibrium high-speed CW laser annealing for optoelectronic applications. Materials Science in Semiconductor Processing. 162 (2023) 107516 10.1016/j.mssp.2023.107516 | |
| Yewon Kim, A. Venkatesan, Jihoon Kim, Hanul Kim, Kenji Watanabe, Takashi Taniguchi, Dongmok Whang, Gil-Ho Kim. Improved electrical properties of encapsulated MoTe2 with 1T′ edge contacts via laser irradiation. Materials Science in Semiconductor Processing. 153 (2023) 107133 10.1016/j.mssp.2022.107133 | |
| Pham Van Trinh, Nguyen Ngoc Anh, Ngo Thi Bac, Cao Tuan Anh, Nguyen Van Hao, Le Ha Chi, Bui Hung Thang, Nguyen Van Chuc, Phan Ngoc Minh, Naoki Fukata. Enhanced efficiency of silicon micro-pyramids/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate/gold nanoparticles hybrid solar cells. Materials Science in Semiconductor Processing. 137 (2022) 106226 10.1016/j.mssp.2021.106226 | |
| Ryo Matsumura, Satoshi Ishii, Naoki Fukata. Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing. Materials Science in Semiconductor Processing. 134 (2021) 106024 10.1016/j.mssp.2021.106024 | |
| Ahmed A.M. El-Amir, Takeo Ohsawa, Satoshi Ishii, Masataka Imura, Meiyong Liao, Xiuwei Fu, Hiroyo Segawa, Isao Sakaguchi, Tadaaki Nagao, Kiyoshi Shimamura, Naoki Ohashi. Silicon-compatible Mg2Si/Si n-p photodiodes with high room temperature infrared responsivity. Materials Science in Semiconductor Processing. 102 (2019) 104577 10.1016/j.mssp.2019.06.012 | |
| Ahmed A.M. El-Amir, Takeo Ohsawa, Toshihide Nabatame, Akihiko Ohi, Yoshiki Wada, Masaru Nakamura, Xiuwei Fu, Kiyoshi Shimamura, Naoki Ohashi. Ecofriendly Mg2Si-based photodiode for short-wavelength IR sensing. Materials Science in Semiconductor Processing. 91 (2019) 222-229 10.1016/j.mssp.2018.11.033 | |
| T. Teraji, J. Isoya, K. Watanabe, S. Koizumi, Y. Koide. Homoepitaxial diamond chemical vapor deposition for ultra-light doping. Materials Science in Semiconductor Processing. 70 (2017) 197-202 10.1016/j.mssp.2016.11.012 | |
| Takahisa Shiraishi, Kiliha Katayama, Tatsuhiko Yokouchi, Takao Shimizu, Takahiro Oikawa, Osami Sakata, Hiroshi Uchida, Yasuhiko Imai, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo. Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates. Materials Science in Semiconductor Processing. 70 (2017) 239-245 10.1016/j.mssp.2016.12.008 | |
| G. Murtaza, A. Sajid, M. Rizwan, Y. Takagiwa, H. Khachai, M. Jibran, R. Khenata, S. Bin Omran. First principles study of Mg2X (X=Si, Ge, Sn, Pb): Elastic, optoelectronic and thermoelectric properties. Materials Science in Semiconductor Processing. 40 (2015) 429-435 10.1016/j.mssp.2015.06.075 | |
| D. Shuang, J.B. Wang, X.L. Zhong, H.L. Yan. Raman scattering and cathodoluminescence properties of flower-like manganese doped ZnO nanorods. Materials Science in Semiconductor Processing. 10 [2-3] (2007) 97-102 10.1016/j.mssp.2007.04.002 | |
