Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing

Ryo Matsumura, Satoshi Ishii, Naoki Fukata.

Materials Science in Semiconductor Processing 134 106024. 2021.

https://doi.org/10.1016/j.mssp.2021.106024

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作成時刻: 2021-06-23 03:00:20 +0900 更新時刻: 2026-09-29 06:22:17 +0900

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