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Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing

Ryo Matsumura, Satoshi Ishii, Naoki Fukata.
Materials Science in Semiconductor Processing 134 106024. 2021.
https://doi.org/10.1016/j.mssp.2021.106024
Open Access Elsevier BV (Publisher)

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    作成時刻: 2021-06-23 03:00:20 +0900更新時刻: 2024-03-31 12:04:04 +0900

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