Osami Sakata; Hiroshi Funakubo; Toyohiko J. Konno; Takanori Kiguchi; Yasuhiko Imai; Hiroshi Uchida; Takahiro Oikawa; Takao Shimizu; Tatsuhiko Yokouchi; Kiliha Katayama; Takahisa Shiraishi

doi:10.1016/j.mssp.2016.12.008

Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates

著者	Takahisa Shiraishi, Kiliha Katayama, Tatsuhiko Yokouchi, Takao Shimizu, Takahiro Oikawa, Osami Sakata, Hiroshi Uchida, Yasuhiko Imai, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo.
掲載誌名	Materials Science in Semiconductor Processing 70 239-245 ISSN: 13698001 ESIでのカテゴリ: MATERIALS SCIENCE
出版社	Elsevier BV
発表年	2017
言語	English
DOI	https://doi.org/10.1016/j.mssp.2016.12.008
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