Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0.5Zr0.5)O2 thin films deposited on various substrates

Takahisa Shiraishi; Kiliha Katayama; Tatsuhiko Yokouchi; Takao Shimizu; Takahiro Oikawa; Osami Sakata; Hiroshi Uchida; Yasuhiko Imai; Takanori Kiguchi; Toyohiko J. Konno; Hiroshi Funakubo

doi:10.1016/j.mssp.2016.12.008

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Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates
(Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0.5Zr0.5)O2 thin films deposited on various substrates)

Takahisa Shiraishi, Kiliha Katayama, Tatsuhiko Yokouchi, Takao Shimizu, Takahiro Oikawa, Osami Sakata, Hiroshi Uchida, Yasuhiko Imai, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo.

Materials Science in Semiconductor Processing 70 239-245. 2017.

https://doi.org/10.1016/j.mssp.2016.12.008

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2017-08-19 21:48:47 +0900更新時刻: 2024-04-01 22:42:01 +0900

Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates(Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0.5Zr0.5)O2 thin films deposited on various substrates)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates
(Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0.5Zr0.5)O2 thin films deposited on various substrates)