- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
- プロフィール
- タグクラウド
- 人のつながり
研究内容
- Keywords
Diamond electronic device
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
研究論文
- LIU, Jiangwei. An overview of high-k oxides on hydrogenated-diamond for metal-oxide-semiconductor capacitors and field-effect transistors. SENSORS. 18 [6] (2018) 813-1-813-17 10.3390/s18060813
- Kongping Wu, Meiyong Liao, Liwen Sang, Jiangwei Liu, Masataka Imura, Haitao Ye, Yasuo Koide. A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface. Journal of Applied Physics. 123 [16] (2018) 161599 10.1063/1.5002176
- J. W. Liu, H. Oosato, M. Y. Liao, M. Imura, E. Watanabe, Y. Koide. Annealing effects on hydrogenated diamond NOR logic circuits. Applied Physics Letters. 112 [15] (2018) 153501 10.1063/1.5022590
会議録
- IMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere. Diamond and Related Materials. 2017, -
- IMURA, Masataka, BANAL, Ganipan Ryan, LIAO, Meiyong, LIU, Jiangwei, AIZAWA, Takashi, TANAKA, Akihiro, IWAI, Hideo, MANO, Takaaki, KOIDE, Yasuo. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111). DIAMOND AND RELATED MATERIALS. 2017, -
口頭発表
- IMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere. Hasselt Diamond Workshop 2017 - SBDD XXII. 2017
- LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. High-k oxide gated diamond field effect transistor. WCSM-2016. 2016
- 劉 江偉, 小出 康夫. ダイヤモンドMOSFET論理回路の開発. NIMS WEEK 2017. 2017
所属学会
応用物理学会
第二期開発予定
第二期開発予定