- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
研究内容
- Keywords
Semiconductor devices, semiconductor physics, surface and interface physics
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Qihao Zhang, Jiwu Lu, Dongyuan Zhai, Jing Xiao, Min He, Jiangwei Liu. Electrical Properties of Al2O3/ZnO Metal–Insulator–Semiconductor Capacitors. IEEE Transactions on Electron Devices. 67 [11] (2020) 5033-5038 10.1109/ted.2020.3021369
- Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Boron-Doped Diamond MOSFETs With High Output Current and Extrinsic Transconductance. IEEE Transactions on Electron Devices. 68 [8] (2021) 3963-3967 10.1109/ted.2021.3087115
- Jiangwei Liu, Tokuyuki Teraji, Bo Da, Hirotaka Ohsato, Yasuo Koide. Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal–Semiconductor Field-Effect Transistors. IEEE Transactions on Electron Devices. 67 [4] (2020) 1680-1685 10.1109/ted.2020.2972979
会議録
- IMURA, Masataka, BANAL, Ganipan Ryan, LIAO, Meiyong, LIU, Jiangwei, AIZAWA, Takashi, TANAKA, Akihiro, IWAI, Hideo, MANO, Takaaki, KOIDE, Yasuo. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111). DIAMOND AND RELATED MATERIALS. (2017)
- IMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere. Diamond and Related Materials. (2017)
口頭発表
- DA, Bo, LIU, Jiangwei, YOSHIKAWA, Hideki, TANUMA, Shigeo. Data-driven information extraction of passivation layers in stainless steel from electron microscopy. International Conference on the Cooperation and Integration of Industry, Education, Research and Application 2022 — Metal-based New Materials and Advanced Manufacturing Technology Subforum (ICIERA-2022). 2022
- LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo. Resistance clarification in hydrogen-terminated diamond MOSFETs. 2022年（令和4年）応用物理学会 秋季学術講演会. 2022
- LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo. Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs. 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-Ⅸ) http://iscsi9.org/. 2022
その他の文献
- LIU, Jiangwei. Activity Report of Young Researchers Dispatched Overseas Program on Materials Science and Advanced Electronics Created by Singularity. 新学術領域「特異構造の結晶科学」News Letter. (2018) 1-2
- Jiangwei Liu, Hongyang Zhao, Jinlong Liu, Aurélien Maréchal, Wei Wang. Semiconductors: Materials, Physics, and Devices. Active and Passive Electronic Components. 2016 (2016) 1-2 10.1155/2016/4523960
特許
- 特許第6713167号 トリプルゲートＨ－ダイヤモンドＭＩＳＦＥＴ及びその製造方法 (2020)
- 特許第6783463号 ダイヤモンド半導体装置、それを用いたロジック装置、及びダイヤモンド半導体装置の製造方法 (2020)
- 特許第6519792号 ノーマリーオフ特性を有する水素化ダイヤモンドＭＩＳＦＥＴの製造方法 (2019)
- 特開2017050485号 ノーマリーオフ特性を有する水素化ダイヤモンドＭＩＳＦＥＴの製造方法 (2017)
- 特開2017220512号 トリプルゲートＨ－ダイヤモンドＭＩＳＦＥＴ及びその製造方法 (2017)
- 特開2018078254号 ダイヤモンド半導体装置、それを用いたロジック装置、及びダイヤモンド半導体装置の製造方法 (2018)
所属学会
応用物理学会