- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
- プロフィール
- 研究概要
- タグクラウド
- 人のつながり
研究内容
- Keywords
Semiconductor devices, semiconductor physics, surface and interface physics
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
研究論文
- Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide. High Current Output Hydrogenated Diamond Triple-Gate MOSFETs. IEEE Journal of the Electron Devices Society. 7 (2019) 561-565 10.1109/jeds.2019.2915250
- J-W Liu, H Oosato, B Da, T Teraji, A Kobayashi, H Fujioka, Y Koide. Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 °C. Journal of Physics D: Applied Physics. 52 [31] (2019) 315104 10.1088/1361-6463/ab1e31
- LIU, Jiangwei. An overview of high-k oxides on hydrogenated-diamond for metal-oxide-semiconductor capacitors and field-effect transistors. SENSORS. 18 [6] (2018) 813-1-813-17 10.3390/s18060813
会議録
- IMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere. Diamond and Related Materials. 2017, -
- IMURA, Masataka, BANAL, Ganipan Ryan, LIAO, Meiyong, LIU, Jiangwei, AIZAWA, Takashi, TANAKA, Akihiro, IWAI, Hideo, MANO, Takaaki, KOIDE, Yasuo. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111). DIAMOND AND RELATED MATERIALS. 2017, -
口頭発表
- IMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere. Hasselt Diamond Workshop 2017 - SBDD XXII. 2017
- LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. High-k oxide gated diamond field effect transistor. WCSM-2016. 2016
- 劉 江偉, 小出 康夫. ダイヤモンドMOSFET論理回路の開発. NIMS WEEK 2017. 2017
所属学会
応用物理学会
第二期開発予定
第二期開発予定