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劉 江偉
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305-0044 茨城県つくば市並木1-1 [アクセス]
  • 論文・発表

[研究論文] |[書籍] |[会議録] |[口頭発表] |[特許]

研究論文 TSV

2017
  1. Ryan G. Banal, Masataka Imura, Hirohito Ohata, Meiyong Liao, Jiangwei Liu, Yasuo Koide. Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2 O3 Stack Gate. physica status solidi (a). 214 [11] (2017) 1700463 10.1002/pssa.201700463
  2. Jiangwei Liu, Hirotaka Ohsato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe, Yasuo Koide. Logic Circuits With Hydrogenated Diamond Field-Effect Transistors. IEEE Electron Device Letters. 38 [7] (2017) 922-925 10.1109/led.2017.2702744
  3. J. W. Liu, M. Y. Liao, M. Imura, R. G. Banal, Y. Koide. Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters. Journal of Applied Physics. 121 [22] (2017) 224502 10.1063/1.4985066
  4. Bo Da, Jiangwei Liu, Mahito Yamamoto, Yoshihiro Ueda, Kazuyuki Watanabe, Nguyen Thanh Cuong, Songlin Li, Kazuhito Tsukagoshi, Hideki Yoshikawa, Hideo Iwai, Shigeo Tanuma, Hongxuan Guo, Zhaoshun Gao, Xia Sun, Zejun Ding. Virtual substrate method for nanomaterials characterization. Nature Communications. 8 (2017) 15629 10.1038/ncomms15629
  5. J. W. Liu, H. Oosato, M. Y. Liao, Y. Koide. Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator. Applied Physics Letters. 110 [20] (2017) 203502 10.1063/1.4983091
  6. Yijun Yang, Dai-Ming Tang, Chao Zhang, Yihui Zhang, Qifeng Liang, Shimou Chen, Qunhong Weng, Min Zhou, Yanming Xue, Jiangwei Liu, Jinghua Wu, Qiu Hong Cui, Chao Lian, Guolin Hou, Fangli Yuan, Yoshio Bando, Dmitri Golberg, Xi Wang. “Protrusions” or “holes” in graphene: which is the better choice for sodium ion storage?. Energy & Environmental Science. 10 [4] (2017) 979-986 10.1039/c7ee00329c
  7. Jiangwei Liu, Yasuo Koide. Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors. BIOSENSORS AND BIODETECTION. 1572 (2017) 217-232 10.1007/978-1-4939-6911-1_15
  8. Masataka Imura, Ryan G. Banal, Meiyong Liao, Jiangwei Liu, Takashi Aizawa, Akihiro Tanaka, Hideo Iwai, Takaaki Mano, Yasuo Koide. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel. Journal of Applied Physics. 121 [2] (2017) 025702 10.1063/1.4972979
2016
  1. Jiangwei Liu, Hongyang Zhao, Jinlong Liu, Aurélien Maréchal, Wei Wang. Semiconductors: Materials, Physics, and Devices. Active and Passive Electronic Components. 2016 (2016) 1-2 10.1155/2016/4523960
  2. Jiangwei Liu, Hirotaka Ohsato, Xi Wang, Meiyong Liao, Yasuo Koide. Design and fabrication of high-performance diamond triple-gate field-effect transistors. Scientific Reports. 6 [1] (2016) 10.1038/srep34757
  3. Elisseos Verveniotis, Yuji Okawa, Marina V. Makarova, Yasuo Koide, Jiangwei Liu, Břetislav Šmíd, Kenji Watanabe, Takashi Taniguchi, Katsuyoshi Komatsu, Takeo Minari, Xuying Liu, Christian Joachim, Masakazu Aono. Self-assembling diacetylene molecules on atomically flat insulators. Physical Chemistry Chemical Physics. 18 [46] (2016) 31600-31605 10.1039/c6cp06749b
  4. J. W. Liu, M. Y. Liao, M. Imura, Y. Koide. High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors. Journal of Applied Physics. 120 [12] (2016) 124504 10.1063/1.4962851
  5. Ryan G. Banal, Masataka Imura, Jiangwei Liu, Yasuo Koide. Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors. Journal of Applied Physics. 120 [11] (2016) 115307 10.1063/1.4962854
  6. F.N. Li, J.W. Liu, J.W. Zhang, X.L. Wang, W. Wang, Z.C. Liu, H.X. Wang. Measurement of barrier height of Pd on diamond (100) surface by X-ray photoelectron spectroscopy. Applied Surface Science. 370 (2016) 496-500 10.1016/j.apsusc.2016.02.189
  7. Chao Zhang, Xi Wang, Qifeng Liang, Xizheng Liu, Qunhong Weng, Jiangwei Liu, Yijun Yang, Zhonghua Dai, Kejian Ding, Yoshio Bando, Jie Tang, Dmitri Golberg. Amorphous Phosphorus/Nitrogen-Doped Graphene Paper for Ultrastable Sodium-Ion Batteries. Nano Letters. 16 [3] (2016) 2054-2060 10.1021/acs.nanolett.6b00057
  8. Jing Zhao, Jiangwei Liu, Liwen Sang, Meiyong Liao, David Coathup, Masataka Imura, Baogui Shi, Changzhi Gu, Yasuo Koide, Haitao Ye. Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond. Applied Physics Letters. 108 [1] (2016) 012105 10.1063/1.4939650
2014
  1. J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, Y. Koide. Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor. Applied Physics Letters. 105 [8] (2014) 082110 10.1063/1.4894291
  2. Xi Wang, Zhenhua Chen, Dequan Liu, Wei Tian, Qi Wang, Chao Zhang, Jiangwei Liu, Liyuan Han, Yoshio Bando, Dmitri Golberg. Triple-Yolked ZnO/CdS Hollow Spheres for Semiconductor-Sensitized Solar Cells. Particle & Particle Systems Characterization. 31 [7] (2014) 757-762 10.1002/ppsc.201300365
  3. J-W Liu, M-Y Liao, M Imura, E Watanabe, H Oosato, Y Koide. Diamond field effect transistors with a high-dielectric constant Ta2O5as gate material. Journal of Physics D: Applied Physics. 47 [24] (2014) 245102 10.1088/0022-3727/47/24/245102
  4. Chao Zhang, Wei Tian, Zhi Xu, Xi Wang, Jiangwei Liu, Song-Lin Li, Dai-Ming Tang, Dequan Liu, Meiyong Liao, Yoshio Bando, Dmitri Golberg. Photosensing performance of branched CdS/ZnO heterostructures as revealed by in situ TEM and photodetector tests. Nanoscale. 6 [14] (2014) 8084 10.1039/c4nr00963k
  5. Gang He, Jiangwei Liu, Hanshuang Chen, Yanmei Liu, Zhaoqi Sun, Xiaoshuang Chen, Mao Liu, Lide Zhang. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation. J. Mater. Chem. C. 2 [27] (2014) 5299-5308 10.1039/c4tc00572d
  6. Wei Tian, Chao Zhang, Tianyou Zhai, Song-Lin Li, Xi Wang, Jiangwei Liu, Xiao Jie, Dequan Liu, Meiyong Liao, Yasuo Koide, Dmitri Golberg, Yoshio Bando. Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS-ZnO Heterostructure Nanofilms. ADVANCED MATERIALS. 26 [19] (2014) 3088-3093 10.1002/adma.201305457

書籍 TSV

口頭発表 TSV

2017
  1. LIU, Jiangwei. Diamond NOT and NOR logic circuits composed of enhancement-mode and depletion-mode MOSFETs. 第二屆海峽両岸金剛石薄膜及功能器件研討會. 2017
  2. LIU, Jiangwei, KOIDE, Yasuo. ダイヤモンドMOSFET論理回路の開発. NIMS WEEK 2017. 2017
  3. LIU, Jiangwei. Semiconductor diamond-based MOS electronic devices. 4th Annual Global Congress of Knowledge Economy-2017. 2017
  4. KOIDE, Yasuo, LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka. Normally-on/off control of diamond FETs and logic circuit demonstration. The 2017 E-MRS Fall Meeting and Exhibit. 2017
  5. LIU, Jiangwei. Diamond field-effect transistors. IWMSE 2017. 2017
  6. IMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Improvement on electrical properties of H-terminated diamond FETs using sputter deposition AlN/ atomic layer deposition Al2O3 st. 28th International Conference on Diamond and Carbon Materials. 2017
  7. LIU, Jiangwei, OOSATO, Hirotaka, WANG, Xi, LIAO, Meiyong, KOIDE, Yasuo. Fabrication of triple-gate hydrogenated diamond MOSFETs. International Conference on Diamond and Carbon Materials 2017. 2017
  8. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Logic circuits with hydrogenated diamond MOSFETs. International Conference on Diamond and Carbon Materials 2017. 2017
  9. LIU, Jiangwei, OOSATO, Hirotaka, LIAO, Meiyong, IMURA, Masataka, Eiichiro Watanabe, KOIDE, Yasuo. Diamond logic circuits with depletion- and enhancement-mode MOSFETs. 29th International Conference on Defects in Semiconductors. 2017
  10. LIU, Jiangwei. Recent development for semiconductor diamond based MOSFETs. The International Conference on New Materials and Applications. 2017
  11. LIU, Jiangwei. Recent developments for our diamond electronic devices. Collaborative Conference on Materials Research (CCMR) 2017. 2017
  12. KOIDE, Yasuo, LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka. D/E-mode control of diamond FETs and logic circuit demonstration. Conference on Single Crystal Diamond and Electronics (SCDE2017). 2017
  13. KOIDE, Yasuo, LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka. High-current triple-gate H-diamond MOSFET. New Diamond and Nano Carbon Conference, (NDNC2017). 2017
  14. IMURA, Masataka, BANAL, Ganipan Ryan, LIAO, Meiyong, LIU, Jiangwei, AIZAWA, Takashi, TANAKA, Akihiro, IWAI, Hideo, MANO, Takaaki, KOIDE, Yasuo. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111). The 11th Conference on New Diamond and Nano Carbons (NDNC2017). 2017
  15. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Enhancement-mode Hydrogenated Diamond MOSFETs and MOSFET Logic Circuits. 1st Workshop of "LEADER". 2017
  16. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Diamond NOT and NOR logic circuits. 第64回応用物理学会春季学術講演会. 2017
  17. IMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere. Hasselt Diamond Workshop 2017 - SBDD XXII. 2017
  18. DA, Bo, LIU, Jiangwei, NGUYEN, Cuong Thanh, TSUKAGOSHI, Kazuhito, IWAI, Hideo, YOSHIKAWA, Hideki, TANUMA, Shigeo. Virtual substrate method for nanomaterials characterization. 共用・計測 合同シンポジウム2017 . 2017
2016
  1. LIU, Jiangwei. Single crystalline diamond MOSFETs and Logic circuits. 2016 china international carbon materials conference. 2016
  2. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, BANAL, Ganipan Ryan, KOIDE, Yasuo. Fabrication of hydrogenated diamond MOSFET logic circuits. 第30回ダイヤモンドシンポジウム. 2016
  3. LIU, Jiangwei. Hydrogenated diamond MOSFETs and Logic circuits. Nanotechnology-2016 . 2016
  4. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Recent Developments in Diamond MOSFET Electronic Devices. ICYS Workshop FY2016. 2016
  5. BANAL, Ganipan Ryan, IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Electrical properties of H-terminated diamond field effect transistors with AlN gate material sputter-deposited under Ar+N2 atmosphere. The 77th JSAP Autumn Meeting, 2016. 2016
  6. LIU, Jiangwei, OOSATO, Hirotaka, WANG, Xi, LIAO, Meiyong, KOIDE, Yasuo. Fabrication of triple-gate fin-type hydrogenated diamond MOSFETs. The 77th JSAP Autumn Meeting, 2016. 2016
  7. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, BANAL, Ganipan Ryan, KOIDE, Yasuo. Hydrogenated diamond NOT and NOR logic gates composed of enhancement-mode and depletion-mode MOSFETs. The 77th JSAP Autumn Meeting, 2016. 2016
  8. IMURA, Masataka, BANAL, Ganipan Ryan, LIAO, Meiyong, LIU, Jiangwei, KOIDE, Yasuo, MATSUMOTO Takao, SHIBATA Naoya, IKUHARA Yuuichi. Microstructure and Hole Accumulation Mechanism of AlN/Diamond(111) Heterojunctions Prepared by MOVPE. International Conference on Diamond and Carbon Materials 2016. 2016
  9. BANAL, Ganipan Ryan, IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors. International Conference on Diamond and Carbon Materials 2016. 2016
  10. VERVENIOTIS, Elissaios, OKAWA, Yuji, MAKAROVA, Marina Vadimovna, KOIDE, Yasuo, LIU, Jiangwei, SMID, Bretislav, WATANABE, Kenji, TANIGUCHI, Takashi, KOMATSU, Katsuyoshi, JOACHIM, Christian, AONO, Masakazu. Diacetylene monolayers and aggregates self-assembled on atomically flat surfaces. AFM Conference 2016. 2016
  11. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, BANAL, Ganipan Ryan, KOIDE, Yasuo. High-k TiO2 on Diamond for Electronic Devices: Capacitor, Field-effect Transistor, and Logic Inverter. 10th International Conference on New Diamond and Nano Carbons. 2016
  12. VERVENIOTIS, Elissaios, OKAWA, Yuji, MAKAROVA, Marina Vadimovna, KOIDE, Yasuo, LIU, Jiangwei, SMID, Bretislav, WATANABE, Kenji, TANIGUCHI, Takashi, KOMATSU, Katsuyoshi, JOACHIM, Christian, AONO, Masakazu. Diacetylene monolayers and aggregates self-assembled on atomically flat surfaces. 2016 E-MRS Spring Meeting and Exhibit. 2016
  13. LIU, Jiangwei. Our studies on Diamond Electronic Devices. University of Science and Technology Beijing Visiting. 2016
  14. LIU, Jiangwei. Semiconductor diamond metal-insulator-semiconductor field-effect transistors. 2016 Energy, Materials, and Nanotechnology (EMN) Meeting. 2016
  15. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, BANAL, Ganipan Ryan, KOIDE, Yasuo. High-k TiO2 Films Deposition on Hydrogenated-diamond. 第63回応用物理学会春季学術講演会. 2016
  16. VERVENIOTIS, Elissaios, OKAWA, Yuji, MAKAROVA, Marina Vadimovna, KOIDE, Yasuo, LIU, Jiangwei, SMID, Bretislav, WATANABE, Kenji, TANIGUCHI, Takashi, KOMATSU, Katsuyoshi, JOACHIM, Christian, AONO, Masakazu. Diacetylene monolayers and aggregates self-assembled on atomically flat surfaces. MANA International Symposium 2016. 2016
  17. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Enhancement mode hydrogenated diamond MISFETs. MANA International Symposium 2016. 2016
  18. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. High-k oxide gated diamond field effect transistor. WCSM-2016. 2016
  19. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Fabrication of Normally Off Diamond Metal-insulator-semiconductor field-effect transistors. ICYS Workshop 2016. 2016
2015
  1. LIAO, Meiyong, LIU, Jiangwei, SANG, Liwen, David Coatchup, Jiangling Li, IMURA, Masataka, KOIDE, Yasuo, Haitao Ye. Impedance Analysis of Hydrogen-Terminated Diamond MOS Structure. MRS Fall Meeting 2015 . 2015
  2. IMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, KOIDE, Yasuo. AlN/ダイヤモンド及びダイヤモンド/AlN/サ ファイア上のヘテロエピタキシャル成長. 第29回ダイヤモンドシンポジウム. 2015
  3. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Control of normally-on/off in hydrogenated-diamond MISFET. 第29回ダイヤモンドシンポジウム. 2015
  4. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. ZrO2 on hydrogenated-diamond: breakdown electric field, interfacial band configuration, and gate-drain distance scaling effect for electrical property of MISFET. 第76回応用物理学会秋季講演会. 2015
  5. BANAL, Ganipan Ryan, IMURA, Masataka, LIU, Jiangwei, KOIDE, Yasuo. ALD-Al2O3/SD-AlN as Bilayer Gate Material for Diamond FET. The Japan Society of Applied Physics Autumn Meeting, 2015. 2015
  6. KOIDE, Yasuo, IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong, BANAL, Ganipan Ryan, Matsumoto Takao, Shibata Naoya, Ikuhara Yuichi. Hole channel formation mechanism in AlN/diamond heterojunction and high-k oxide gate diamond FETs. ICDCM 2015. 2015
  7. LIU, Jiangwei. Insulator on hydrogenated-diamond for electronic devices: from capacitor to logic inverter. FP7 IRSES project meeting. 2015
  8. LIAO, Meiyong, LIU, Jiangwei, SANG, Liwen, David Coatchup, Jiangling Li, IMURA, Masataka, Haitao Ye, KOIDE, Yasuo. Impedance Spectroscopy of Diamond MOS Structure. the 9th International Conference on New Diamonds and Nano Carbon. 2015
  9. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Hydrogenated-diamond MISFET logic inverter. 9th International Conference on New Diamond and Nano Carbons. 2015
  10. LIU, Jiangwei. Hydrogenated-diamond Logic Inverter. EMN East Meeting. 2015
  11. KOIDE, Yasuo, LIU, Jiangwei, IMURA, Masataka, LIAO, Meiyong. Diamond FETs using heterojunction and high-k dielectrics. ISPlasma2015 / IC-PLANTS2015. 2015
  12. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Atomic Layer Deposited High-k Insulators on Hydrogenated-diamond for Field Effect Transistors. MANA International Symposium 2015. 2015
  13. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Diamond Ring Oscillator. ICYS Workshop 2015. 2015
2014
  1. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Atomic Layer Deposited HfO2/Al2O3 Multi-nano-layer on Diamond for Field Effect Transistor. The 4th Annual World Congress of Nano-S&T. 2014
  2. LIU, Jiangwei, KOIDE, Yasuo. Diamond logic inverter fabrication. NIMS forum 2014. 2014
  3. KOIDE, Yasuo, LIU, Jiangwei, IMURA, Masataka, LIAO, Meiyong. Diamond FETs using heterojunction and high-k dielectrics. EuMIC2014. 2014
  4. IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo, MATSUMOTO Takao, SHIBATA Naoya, IKUHARA Yuuichi. AlN/ (111)面ダイヤモンドヘテロ接合界面の微細構造観察 と電気的特性評価. 第75回応用物理学会秋季学術講演会. 2014
  5. KOIDE, Yasuo, IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong. 窒化物半導体の界面制御とナノラミネート特異構造を用いた電子デバイスの開発. 第75回応用物理学会秋季学術講演会. 2014
  6. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Hydrogenated-diamond logic inverter fabrication with enhancement-mode metal-insulator-semiconductor field effect transistor. 第75回応用物理学会秋季学術講演会. 2014
  7. IMURA, Masataka, TANAKA, Akihiro, IWAI, Hideo, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Energy-Band Offset of AlN/Diamond(111) Heterojunction Determined by X-ray Photoelectron Spectroscopy. International Conference on Solid State Devices and Materials. 2014
  8. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. High-k/hydrogenated-diamond metal-insulator-semiconductor field effect transistors fabrication. International Conference on Diamond and Carbon Materials. 2014
  9. IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Recent progress of field effect transistors by AlN/Diamond Heterostructure. The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014). 2014
  10. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. HfO2 on hydrogenated-diamond for field effect transistors. IUMRS-ICA 2014. 2014
  11. IMURA, Masataka, TANAKA, Akihiro, IWAI, Hideo, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Energy-Band Offset of AlN/Diamond(111) Heterojunction Determined by X-ray Photoelectron Spectroscopy. 第33回電子材料シンポジウム. 2014
  12. IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Atomic layer deposited Al2O3/diamond field effect transistors using surface p-channel prepared by thermal treatment with H2+NH3 . 14th International Conference on Atomic Layer Deposition. 2014
  13. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Diamond metal-insulator-semiconductor field effect transistor logic inverters. 2014 International Symposium on Single Crystal Diamond Electroni. 2014
  14. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Fabrication of low on-resistance diamond field effect transistors. New Diamond and Nano Carbons Conference (NDNC 2014). 2014
  15. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, OOSATO, Hirotaka, WATANABE, Eiichiro, KOIDE, Yasuo. Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond. New Diamond and Nano Carbons Conference (NDNC 2014). 2014
  16. KOIDE, Yasuo, LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, OOSATO, Hirotaka, WATANABE, Eiichiro. Frequency dispersion properties at Al2O3 and HfO2/H-terminated diamond interfaces. New Diamond and Nano Carbons Conference (NDNC 2014). 2014
  17. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Normally-off HfO2/diamond field effect transistors fabrication. 2014年 第61回応用物理学会春季学術講演会. 2014
  18. IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. MOVPE法による(111)面ダイヤモンド基板上のAlNの高品質化. 第61回応用物理学会春季学術講演会. 2014
  19. KOIDE, Yasuo, LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, OOSATO, Hirotaka, WATANABE, Eiichiro, TSUYA, Daiju. Al2O3およびHfO2/水素終端ダイヤモンド界面の周波数分散特性. 第61回応用物理学会春季学術講演会. 2014
2013
  1. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. HfO2/diamond電界効果トランジスタの作成. 第27回ダイヤモンドシンポジウム. 2013
  2. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. HfO2/Hydrogenated-diamond field effect transistors for power devices. 第13回 NIMSフォーラム. 2013
  3. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Electrical characteristics and band configuration of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor structure. 2013 JSAP-MRS Joint Symposia. 2013
  4. IMURA, Masataka, OOSATO, Hirotaka, WATANABE, Eiichiro, TSUYA, Daiju, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Diamond field effect transistors using Al2O3 insulator / surface p-channel diamond prepared by thermal treatment with hydrogen a. International Conference on Diamond and Carbon Materials 2013. 2013
  5. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Fabrication of HfO2/hydrogenated diamond metal-oxide-semiconductor field effect transistors. International Conference on Diamond and Carbon Materials. 2013
  6. IMURA, Masataka, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Atomic Layer Deposition Technique for Diamond-based Field Effect Transistors. NIMS Conference 2013. 2013
  7. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Combination with Atomic Layer Deposition Technique for Fabrication of High-performance HfO2/diamond Metal-oxide-insulator Field Effect Transistors. 2013 NIMS conference. 2013
  8. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. Band configuration of HfO2/hydrogen-terminated diamond heterointerface correlated with electrical properties of metal/HfO2/hydrogen-terminated diamond diodes. 2013 New Diamond and Nanocarbon. 2013
  9. LIU, Jiangwei, Shaoheng Cheng, LIAO, Meiyong, IMURA, Masataka, TANAKA, Akihiro, IWAI, Hideo, KOIDE, Yasuo. Interfacial Electronic Band Alignment of Ta2O5/Hydrogen-terminated diamond Heterojunction Determined by X-ray Photoelectron Spec. 2013 New Diamond and Nanocarbon . 2013
  10. LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka, KOIDE, Yasuo. 原子層堆積法による水素終端ダイヤモンド上にAl2O3とHfO2の電子構造. 第60回応用物理学会春季学術講演会. 2013

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