HOME > 論文 > 書誌詳細Normally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kVJ. Liu, T. Teraji, B. Da, Y. Koide. Applied Physics Letters 127 [4] 042601. 2025.https://doi.org/10.1063/5.0278392 Open Access AIP Publishing (Publisher) Materials Data Repository (MDR) NIMS著者劉 江偉寺地 徳之Materials Data Repository (MDR)上の本文・データセットMDRavailable Normally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV 作成時刻: 2025-09-05 03:12:10 +0900 更新時刻: 2026-09-17 04:30:36 +0900
