HOME > Article > DetailNormally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kVJ. Liu, T. Teraji, B. Da, Y. Koide. Applied Physics Letters 127 [4] 042601. 2025.https://doi.org/10.1063/5.0278392 Open Access Materials Data Repository (MDR) NIMS author(s)LIU, JiangweiTERAJI, TokuyukiFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Normally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV Created at: 2025-09-05 03:12:10 +0900 Updated at: 2026-10-18 04:30:44 +0900
