HOME > 論文 > 書誌詳細Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETsJiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. IEEE Transactions on Electron Devices 71 [3] 1764-1768. 2024.https://doi.org/10.1109/ted.2024.3356468 Open Access Institute of Electrical and Electronics Engineers (IEEE) (Publisher) Materials Data Repository (MDR) NIMS著者劉 江偉寺地 徳之達 博小出 康夫Materials Data Repository (MDR)上の本文・データセットMDRavailable Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs 作成時刻: 2024-03-05 03:11:31 +0900更新時刻: 2024-03-29 10:27:16 +0900
