HOME > Article > DetailSuppression of High Threshold Voltage for Boron-Doped Diamond MOSFETsJiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. IEEE Transactions on Electron Devices 71 [3] 1764-1768. 2024.https://doi.org/10.1109/ted.2024.3356468 Open Access Materials Data Repository (MDR) NIMS author(s)LIU, JiangweiTERAJI, TokuyukiDA, BoFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs Created at: 2024-03-05 03:11:31 +0900 Updated at: 2025-07-15 09:48:59 +0900
