HOME > Article > DetailSuppression of High Threshold Voltage for Boron-Doped Diamond MOSFETsJiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. IEEE Transactions on Electron Devices 71 [3] 1764-1768. 2024.https://doi.org/10.1109/ted.2024.3356468 Open Access Institute of Electrical and Electronics Engineers (IEEE) (Publisher) Materials Data Repository (MDR) NIMS author(s)LIU, JiangweiTERAJI, TokuyukiDA, BoFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs Created at: 2024-03-05 03:11:31 +0900 Updated at: 2026-01-21 09:45:23 +0900
