| 13件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs. IEEE Transactions on Electron Devices. 71 [3] (2024) 1764-1768 10.1109/ted.2024.3356468 Open Access | |
| Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition. IEEE Transactions on Electron Devices. 70 [5] (2023) 2199-2203 10.1109/ted.2023.3256349 Open Access | |
| Pushkar Dasika, Kenji Watanabe, Takashi Taniguchi, Kausik Majumdar. Electrically Self-Aligned, Reconfigurable Test Structure Using WSe2/SnSe2 Heterojunction for TFET and MOSFET. IEEE Transactions on Electron Devices. 69 [9] (2022) 5377-5381 10.1109/ted.2022.3191991 | |
| Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide. Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs. IEEE Transactions on Electron Devices. 69 [3] (2022) 1181-1185 10.1109/ted.2022.3140699 | |
| Hiroya Shike, Rihito Kuroda, Ryota Kobayashi, Maasa Murata, Yasuyuki Fujihara, Manabu Suzuki, Shoma Harada, Taku Shibaguchi, Naoya Kuriyama, Takaki Hatsui, Jun Miyawaki, Tetsuo Harada, Yuichi Yamasaki, Takeo Watanabe, Yoshihisa Harada, Shigetoshi Sugawa. A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank. IEEE Transactions on Electron Devices. 68 [4] (2021) 2056-2063 10.1109/ted.2021.3062576 Open Access | |
| Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Boron-Doped Diamond MOSFETs With High Output Current and Extrinsic Transconductance. IEEE Transactions on Electron Devices. 68 [8] (2021) 3963-3967 10.1109/ted.2021.3087115 | |
| Qihao Zhang, Jiwu Lu, Dongyuan Zhai, Jing Xiao, Min He, Jiangwei Liu. Electrical Properties of Al2O3/ZnO Metal–Insulator–Semiconductor Capacitors. IEEE Transactions on Electron Devices. 67 [11] (2020) 5033-5038 10.1109/ted.2020.3021369 | |
| Jiangwei Liu, Tokuyuki Teraji, Bo Da, Hirotaka Ohsato, Yasuo Koide. Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal–Semiconductor Field-Effect Transistors. IEEE Transactions on Electron Devices. 67 [4] (2020) 1680-1685 10.1109/ted.2020.2972979 | |
| Kairong Huang, Fuhua Dai, Qingqing Sun, Tengzhou Yang, Huihua Xu, Xuying Liu, Takeo Minari, Masayuki Kanehara, Chuan Liu. Rapid Laser Annealing of Silver Electrodes for Printing Organic Thin-Film Transistors on Plastic Substrates. IEEE Transactions on Electron Devices. 66 [6] (2019) 2729-2734 10.1109/ted.2019.2911310 | |
| Zakariae Chbili, Asahiko Matsuda, Jaafar Chbili, Jason T. Ryan, Jason P. Campbell, Mhamed Lahbabi, Dimitris E. Ioannou, Kin P. Cheung. Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs. IEEE Transactions on Electron Devices. 63 [9] (2016) 3605-3613 10.1109/ted.2016.2586483 | |
