Electrically Self-Aligned, Reconfigurable Test Structure Using WSe<sub>2</sub>/SnSe<sub>2</sub> Heterojunction for TFET and MOSFET | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Electrically Self-Aligned, Reconfigurable Test Structure Using WSe2/SnSe2 Heterojunction for TFET and MOSFET
(Electrically self-aligned, reconfigurable WSe2/SnSe2 heterojunction for p-tunnel FET and n-MOSFET applications)

Pushkar Dasika, Kenji Watanabe, Takashi Taniguchi, Kausik Majumdar.

IEEE Transactions on Electron Devices 69 [9] 5377-5381. 2022.

https://doi.org/10.1109/ted.2022.3191991

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作成時刻: 2022-08-30 03:27:37 +0900更新時刻: 2024-04-02 05:24:02 +0900

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