A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank

Hiroya Shike; Rihito Kuroda; Ryota Kobayashi; Maasa Murata; Yasuyuki Fujihara; Manabu Suzuki; Shoma Harada; Taku Shibaguchi; Naoya Kuriyama; Takaki Hatsui; Jun Miyawaki; Tetsuo Harada; Yuichi Yamasaki; Takeo Watanabe; Yoshihisa Harada; Shigetoshi Sugawa; Hiroya Shike; Rihito Kuroda; Ryota Kobayashi; Maasa Murata; Yasuyuki Fujihara; Manabu Suzuki; Shoma Harada; Taku Shibaguchi; Naoya Kuriyama; Takaki Hatsui; Jun Miyawaki; Tetsuo Harada; Yuichi Yamasaki; Takeo Watanabe; Yoshihisa Harada; Shigetoshi Sugawa

doi:10.1109/ted.2021.3062576

A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank

Hiroya Shike, Rihito Kuroda, Ryota Kobayashi, Maasa Murata, Yasuyuki Fujihara, Manabu Suzuki, Shoma Harada, Taku Shibaguchi, Naoya Kuriyama, Takaki Hatsui, Jun Miyawaki, Tetsuo Harada, Yuichi Yamasaki, Takeo Watanabe, Yoshihisa Harada, Shigetoshi Sugawa.

IEEE Transactions on Electron Devices 68 [4] 2056-2063. 2021.

https://doi.org/10.1109/ted.2021.3062576

NIMS author(s)

YAMASAKI, Yuichi

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2023-07-29 03:25:40 +0900 Updated at: 2026-09-29 09:36:34 +0900