HOME > 論文 > 書誌詳細Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal–Semiconductor Field-Effect TransistorsJiangwei Liu, Tokuyuki Teraji, Bo Da, Hirotaka Ohsato, Yasuo Koide. IEEE Transactions on Electron Devices 67 [4] 1680-1685. 2020.https://doi.org/10.1109/ted.2020.2972979 NIMS著者劉 江偉寺地 徳之達 博小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2020-03-28 03:00:19 +0900更新時刻: 2025-03-17 05:17:16 +0900
