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Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal–Semiconductor Field-Effect Transistors

Jiangwei Liu, Tokuyuki Teraji, Bo Da, Hirotaka Ohsato, Yasuo Koide.
IEEE Transactions on Electron Devices 67 [4] 1680-1685. 2020.
https://doi.org/10.1109/ted.2020.2972979

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    Created at: 2020-03-28 03:00:19 +0900 Updated at: 2026-08-05 05:13:34 +0900

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