Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al<sub>2</sub>O<sub>3</sub> Deposition | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al₂O₃ Deposition

Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide.

IEEE Transactions on Electron Devices 70 [5] 2199-2203. 2023.

https://doi.org/10.1109/ted.2023.3256349

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MDRavailable Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition

作成時刻: 2023-04-28 03:39:24 +0900 更新時刻: 2026-11-09 07:14:27 +0900

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