HOME > 論文 > 書誌詳細Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 DepositionJiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. IEEE Transactions on Electron Devices 70 [5] 2199-2203. 2023.https://doi.org/10.1109/ted.2023.3256349 Open Access Institute of Electrical and Electronics Engineers (IEEE) (Publisher) Materials Data Repository (MDR) NIMS著者劉 江偉寺地 徳之達 博小出 康夫Materials Data Repository (MDR)上の本文・データセットMDRavailable Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition 作成時刻: 2023-04-28 03:39:24 +0900更新時刻: 2024-04-02 05:35:03 +0900
