HOME > Article > DetailElectrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 DepositionJiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. IEEE Transactions on Electron Devices 70 [5] 2199-2203. 2023.https://doi.org/10.1109/ted.2023.3256349 Open Access Institute of Electrical and Electronics Engineers (IEEE) (Publisher) Materials Data Repository (MDR) NIMS author(s)LIU, JiangweiTERAJI, TokuyukiDA, BoKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition Created at: 2023-04-28 03:39:24 +0900Updated at: 2024-11-14 07:03:47 +0900