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Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs

著者Zakariae Chbili, Asahiko Matsuda, Jaafar Chbili, Jason T. Ryan, Jason P. Campbell, Mhamed Lahbabi, Dimitris E. Ioannou, Kin P. Cheung.
掲載誌名IEEE Transactions on Electron Devices 63 [9] 3605-3613
ISSN: 00189383, 15579646
ESIでのカテゴリ: ENGINEERING
出版社Institute of Electrical and Electronics Engineers (IEEE)
発表年2016
言語English
DOIhttps://doi.org/10.1109/ted.2016.2586483
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