HOME > 論文 > 書誌詳細Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETsZakariae Chbili, Asahiko Matsuda, Jaafar Chbili, Jason T. Ryan, Jason P. Campbell, Mhamed Lahbabi, Dimitris E. Ioannou, Kin P. Cheung. IEEE Transactions on Electron Devices 63 [9] 3605-3613. 2016.https://doi.org/10.1109/ted.2016.2586483 NIMS著者松田 朝彦Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-11-21 21:44:44 +0900 更新時刻: 2026-10-03 06:25:25 +0900
