HOME > Article > DetailModeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETsZakariae Chbili, Asahiko Matsuda, Jaafar Chbili, Jason T. Ryan, Jason P. Campbell, Mhamed Lahbabi, Dimitris E. Ioannou, Kin P. Cheung. IEEE Transactions on Electron Devices 63 [9] 3605-3613. 2016.https://doi.org/10.1109/ted.2016.2586483 NIMS author(s)MATSUDA, AsahikoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-11-21 21:44:44 +0900Updated at: 2024-04-02 00:04:25 +0900
