Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors
(Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors)
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻 :2016-05-24 17:08:34 +0900 更新時刻 :2022-09-05 13:53:49 +0900