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Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors
(Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors)

J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, Y. Koide.
Journal of Applied Physics 114 [8] 084108. 2013.

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      作成時刻 :2016-05-24 17:08:34 +0900 更新時刻 :2022-09-05 13:53:49 +0900

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