Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

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Interfacial band configuration and electrical properties of LaAlO₃/Al₂O₃/hydrogenated-diamond metal-oxide-semiconductor field effect transistors
(Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors)

J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, Y. Koide.

作成時刻: 2016-05-24 17:08:34 +0900更新時刻: 2024-10-06 06:58:29 +0900