High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors
(High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: band configuration, breakdown field, and electrical properties of field-effect transistor)

J. W. Liu, M. Y. Liao, M. Imura, Y. Koide.

Journal of Applied Physics 120 [12] 124504. 2016.

https://doi.org/10.1063/1.4962851

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-11-11 22:50:26 +0900更新時刻: 2024-04-01 17:45:04 +0900

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