HOME > 会議録 > 書誌詳細Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 AtmosphereIMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Diamond and Related Materials . 2017.NIMS著者井村 将隆劉 江偉廖 梅勇小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-04-18 22:54:49 +0900更新時刻: 2017-04-18 22:54:49 +0900
