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Diamond field effect transistors with a high-dielectric constant Ta2O5as gate material
(Diamond field effect transistors with a high-dielectric constant Ta2O5as gate material)

J-W Liu, M-Y Liao, M Imura, E Watanabe, H Oosato, Y Koide.

NIMS著者


    Materials Data Repository (MDR)上の本文・データセット


      作成時刻: 2016-05-24 17:27:32 +0900更新時刻: 2024-09-12 04:48:53 +0900

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